Projects per year
Personal profile
Personal profile
Yanfei Qi received her BEng degree with 1st class honours in telecommunications engineering from Xi’an Jiaotong-Liverpool University (Suzhou) and a master’s degree with distinction in microelectronic systems and telecommunications from the University of Liverpool(UK). Currently, she serves as an experimental officer in the Department of Electrical and Electronic Engineering, XJTLU, being involved in laboratory teaching and assisting in thenbsp; laboratory managment and development.
Experience
Lab Technician, Department of Electrical and Electronic Engineering-XJTLU-2012 to Present
Education/Academic qualification
BSc (Hons)Telecommunications Engineering from Xi'an Jiao tong-Liverpool University-2010
Msc (Distinction) in Microelectronic Systems and Telecommunications from University of Liverpool-2011
Person Types
- Staff
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Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
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International Innovation Research Institute of Third Generation Semiconductor Power Electronic Devices and Power Integration
Wen, H., Liu, W., Lim, E. G., Yue, Y., Wang, X., Ma, F., Xu, D., Yang, L., Wang, R., Sun, J., Xue, F., Chen, M., Wang, Z., Yu, L., Zhao, C., Liu, Y., Song, P., Zhao, Y., Cui, M., Ma, J., Liu, C., Qi, Y., R., P., Taylor, S., Nichols, R., C., Y., Spencer, J., Smith, J., Qian, H. & Zhao, S.
1/01/22 → 31/12/24
Project: Governmental Research Project
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面向智能制造的机械电子工程专业体系与 人才培养模式的改革探究
Zhang, T., Zhang, Q., Sun, J. & Qi, Y.
Project: Governmental Research Project
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Transfer efficiency improvement with GaN HEMT for the wireless power transmission system
Liu, W., Yang, L., Zhao, C., Qi, Y., 赵策洲, 蔡玉謟, 崔苗, 袁宇丹, 孙瑞泽, 易若伟, 刘晨光 & 沈棕杰
1/09/18 → 31/08/20
Project: Governmental Research Project
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基于铝氧化物的RRAM及其制备方法
Translated title of the contribution :Aluminum oxide-based RRAM and preparation method thereof Research output: Patent
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Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers
Shen, Z., Zhao, C., Zhao, T., Xu, W., Liu, Y., Qi, Y., Mitrovic, I. Z., Yang, L. & Zhao, C. Z., 23 Mar 2021, In: ACS Applied Electronic Materials. 3, 3, p. 1288-1300 13 p.Research output: Contribution to journal › Article › peer-review
23 Citations (Scopus) -
Performance variation of solution-processed memristor induced by different top electrode
Shen, Z., Zhao, C., Liu, Y., Qi, Y., Mitrovic, I. Z., Yang, L. & Zhao, C., Dec 2021, In: Solid-State Electronics. 186, 108132.Research output: Contribution to journal › Article › peer-review
6 Citations (Scopus) -
Advances of RRAM devices: Resistive switching mechanisms, materials and bionic synaptic application
Shen, Z., Zhao, C., Qi, Y., Xu, W., Liu, Y., Mitrovic, I. Z., Yang, L. & Zhao, C., Aug 2020, In: Nanomaterials. 10, 8, p. 1-31 31 p., 1437.Research output: Contribution to journal › Review article › peer-review
Open Access201 Citations (Scopus) -
Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device
Qi, Y., Shen, Z., Zhao, C. & Zhao, C. Z., 5 May 2020, In: Journal of Alloys and Compounds. 822, 153603.Research output: Contribution to journal › Article › peer-review
32 Citations (Scopus)