High Reliability Si based GaN MIS-HEMTs

Project: Governmental Research Project

Project Details

Project Title (In Chinese)

高可靠性高功率硅基氮化镓MIS-HEMTs功率器件研发

Fund Amount (RMB)

50000.00
Project CategorySuzhou Science and Technology Development Planning Programme: Key Industrial Technology Innovation - Prospective Applied Basic Research Project
StatusActive
Effective start/end date1/12/21 → 31/12/24