TY - JOUR
T1 - Performance variation of solution-processed memristor induced by different top electrode
AU - Shen, Zongjie
AU - Zhao, Chun
AU - Liu, Yina
AU - Qi, Yanfei
AU - Mitrovic, Ivona Z.
AU - Yang, Li
AU - Zhao, Cezhou
N1 - Funding Information:
This research was funded in part by the Natural Science Foundation of the Jiangsu Higher Education Institutions of China Program (19KJB510059), the Suzhou Science and Technology Development Planning Project: Key Industrial Technology Innovation (SYG201924), and the Key Program Special Fund in XJTLU (KSF-P-02, KSF-T-03, KSF-A-04, KSF-A-05, KSF-A-07). The author Ivona Z. Mitrovic acknowledges the British Council UKIERI project no. IND/CONT/G/17-18/18 and F.No.184-1/2018(IC).
Publisher Copyright:
© 2021 Elsevier Ltd
PY - 2021/12
Y1 - 2021/12
N2 - Al/TE (top electrode)/AlOx/Pt RRAM (resistive random access memory) devices with solution-processed spin-coated AlOx layers annealed at various temperatures (225/250/275 °C) exhibited typical bipolar resistive switching performance with low SET/RESET voltage (<4 V), larger ON/OFF ratio (>103) and excellent stability (retention time over 104 s and endurance cycles more than 100). Ni and TiN were chosen as the TE, respectively. Better RS characteristics were obtained on Ni/AlOx/Pt RRAM devices with lower operating voltage and better stability. In addition, the voltage variation between Ni/AlOx/Pt and TiN/AlOx/Pt RRAM devices was investigated. Compared with Ni/AlOx/Pt RRAM devices, TiN/AlOx/Pt devices operated with higher operation voltage at various annealing temperatures, which indicated the influence of work function difference (△ΦM) between TE and BE (bottom electrode). The greater the △ΦM, the more energy consumption and the higher operation voltage were demanded.
AB - Al/TE (top electrode)/AlOx/Pt RRAM (resistive random access memory) devices with solution-processed spin-coated AlOx layers annealed at various temperatures (225/250/275 °C) exhibited typical bipolar resistive switching performance with low SET/RESET voltage (<4 V), larger ON/OFF ratio (>103) and excellent stability (retention time over 104 s and endurance cycles more than 100). Ni and TiN were chosen as the TE, respectively. Better RS characteristics were obtained on Ni/AlOx/Pt RRAM devices with lower operating voltage and better stability. In addition, the voltage variation between Ni/AlOx/Pt and TiN/AlOx/Pt RRAM devices was investigated. Compared with Ni/AlOx/Pt RRAM devices, TiN/AlOx/Pt devices operated with higher operation voltage at various annealing temperatures, which indicated the influence of work function difference (△ΦM) between TE and BE (bottom electrode). The greater the △ΦM, the more energy consumption and the higher operation voltage were demanded.
KW - RRAM
KW - Solution-processed
KW - Work function difference
UR - http://www.scopus.com/inward/record.url?scp=85110621353&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2021.108132
DO - 10.1016/j.sse.2021.108132
M3 - Article
AN - SCOPUS:85110621353
SN - 0038-1101
VL - 186
JO - Solid-State Electronics
JF - Solid-State Electronics
M1 - 108132
ER -