Material Science
Devices
100%
Dielectric Material
56%
Resistive Random-Access Memory
49%
Temperature
36%
Oxide
35%
Capacitance
34%
Al2O3
30%
Aluminum Oxide
22%
Electrode
22%
Thin Films
20%
Material
19%
Irradiation
18%
Hafnium
17%
Zirconia
17%
Charge Trapping
10%
Annealing
10%
Oxygen Vacancy
9%
Durability
7%
Capacitor
7%
Graphene Oxide
7%
Graphene
7%
Engineering
Resistive Random Access Memory
54%
Resistive
47%
Random Access Memory Device
42%
Resistance Ratio
29%
Electric Potential
18%
Performance
17%
Mechanisms
17%
Current Effect
15%
Low Resistance
12%
Nonvolatile Memory
12%
Applications
12%
Characteristics
11%
Annealing Temperature
10%
Cycles
10%
Dielectrics
9%
Poole-Frenkel Emission
9%
Ohmic Conduction
9%
Stability
8%
Switching
8%
Atomic Layer Deposition
8%
Temperature
7%
Forming
7%
Bionics
7%
Oxygen Vacancy
7%
Dominant Mechanism
7%
Conductive Filament
7%
Lower Temperature
7%
Indium-Tin-Oxide
7%
High Resistance State
6%
Thin Films
5%
High Resistance
5%
Physics
Electric Potential
37%
Resistive Switching
33%
Responses
31%
Oxide
27%
Dielectrics
25%
Hafnium
24%
Gamma Radiation
24%
Memory
22%
Semiconductor Device
22%
Thin Films
20%
Capacitance
17%
Sites
16%
Ratios
14%
Radiation Effect
13%
Emission
8%
Bionics
7%
Indium
7%
Gamma Irradiation
7%
Capacitance-Voltage Characteristics
7%
Performance
7%
Electrodes
7%
Atomic Layer Epitaxy
6%
Shapes
5%
Temperature
5%
Differences
5%
Fabrication
5%
Rupture
5%