Material Science
Al2O3
30%
Aluminum Oxide
22%
Annealing
10%
Capacitance
34%
Capacitor
7%
Charge Trapping
10%
Devices
100%
Dielectric Material
56%
Durability
7%
Electrode
22%
Graphene
7%
Graphene Oxide
7%
Hafnium
17%
Irradiation
18%
Material
19%
Oxide
35%
Oxygen Vacancy
9%
Resistive Random-Access Memory
49%
Temperature
36%
Thin Films
20%
Zirconia
17%
Engineering
Annealing Temperature
10%
Applications
12%
Atomic Layer Deposition
8%
Bionics
7%
Characteristics
11%
Conductive Filament
7%
Current Effect
15%
Cycles
10%
Dielectrics
9%
Dominant Mechanism
7%
Electric Potential
18%
Forming
7%
High Resistance
5%
High Resistance State
6%
Indium-Tin-Oxide
7%
Low Resistance
12%
Lower Temperature
7%
Mechanisms
17%
Nonvolatile Memory
12%
Ohmic Conduction
9%
Oxygen Vacancy
7%
Performance
17%
Poole-Frenkel Emission
9%
Random Access Memory Device
42%
Resistance Ratio
29%
Resistive
47%
Resistive Random Access Memory
54%
Stability
8%
Switching
8%
Temperature
7%
Thin Films
5%
Physics
Atomic Layer Epitaxy
6%
Bionics
7%
Capacitance
17%
Capacitance-Voltage Characteristics
7%
Dielectrics
25%
Differences
5%
Electric Potential
37%
Electrodes
7%
Emission
8%
Fabrication
5%
Gamma Irradiation
7%
Gamma Radiation
24%
Hafnium
24%
Indium
7%
Memory
22%
Oxide
27%
Performance
7%
Radiation Effect
13%
Ratios
14%
Resistive Switching
33%
Responses
31%
Rupture
5%
Semiconductor Device
22%
Shapes
5%
Sites
16%
Temperature
5%
Thin Films
20%