Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Ye Liang; Jiachen Duan; Ping Zhang; Kain Lu Low; Jie Zhang; Wen Liu

doi:10.3390/nano14181529

Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Ye Liang, Jiachen Duan, Ping Zhang, Kain Lu Low, Jie Zhang^*, Wen Liu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Devices under semi-on-state stress often suffer from more severe current collapse than when they are in the off-state, which causes an increase in dynamic on-resistance. Therefore, characterization of the trap states is necessary. In this study, temperature-dependent transient recovery current analysis determined a trap energy level of 0.08 eV under semi-on-state stress, implying that interface traps are responsible for current collapse. Multi-frequency capacitance–voltage (C-V) testing was performed on the MIS diode, calculating that interface trap density is in the range of (Formula presented.) to (Formula presented.) (Formula presented.) (Formula presented.) from (Formula presented.) eV to 0.45 eV.

Original language	English
Article number	1529
Journal	Nanomaterials
Volume	14
Issue number	18
DOIs	https://doi.org/10.3390/nano14181529
Publication status	Published - Sept 2024

Keywords

AlGaN/GaN MIS-HEMT
current collapse
energy level
trap density
trap states

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10.3390/nano14181529

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title = "Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress",

abstract = "Devices under semi-on-state stress often suffer from more severe current collapse than when they are in the off-state, which causes an increase in dynamic on-resistance. Therefore, characterization of the trap states is necessary. In this study, temperature-dependent transient recovery current analysis determined a trap energy level of 0.08 eV under semi-on-state stress, implying that interface traps are responsible for current collapse. Multi-frequency capacitance–voltage (C-V) testing was performed on the MIS diode, calculating that interface trap density is in the range of (Formula presented.) to (Formula presented.) (Formula presented.) (Formula presented.) from (Formula presented.) eV to 0.45 eV.",

keywords = "AlGaN/GaN MIS-HEMT, current collapse, energy level, trap density, trap states",

author = "Ye Liang and Jiachen Duan and Ping Zhang and Low, {Kain Lu} and Jie Zhang and Wen Liu",

note = "Publisher Copyright: {\textcopyright} 2024 by the authors.",

year = "2024",

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doi = "10.3390/nano14181529",

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volume = "14",

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TY - JOUR

T1 - Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

AU - Liang, Ye

AU - Duan, Jiachen

AU - Zhang, Ping

AU - Low, Kain Lu

AU - Zhang, Jie

AU - Liu, Wen

PY - 2024/9

Y1 - 2024/9

N2 - Devices under semi-on-state stress often suffer from more severe current collapse than when they are in the off-state, which causes an increase in dynamic on-resistance. Therefore, characterization of the trap states is necessary. In this study, temperature-dependent transient recovery current analysis determined a trap energy level of 0.08 eV under semi-on-state stress, implying that interface traps are responsible for current collapse. Multi-frequency capacitance–voltage (C-V) testing was performed on the MIS diode, calculating that interface trap density is in the range of (Formula presented.) to (Formula presented.) (Formula presented.) (Formula presented.) from (Formula presented.) eV to 0.45 eV.

AB - Devices under semi-on-state stress often suffer from more severe current collapse than when they are in the off-state, which causes an increase in dynamic on-resistance. Therefore, characterization of the trap states is necessary. In this study, temperature-dependent transient recovery current analysis determined a trap energy level of 0.08 eV under semi-on-state stress, implying that interface traps are responsible for current collapse. Multi-frequency capacitance–voltage (C-V) testing was performed on the MIS diode, calculating that interface trap density is in the range of (Formula presented.) to (Formula presented.) (Formula presented.) (Formula presented.) from (Formula presented.) eV to 0.45 eV.

KW - AlGaN/GaN MIS-HEMT

KW - current collapse

KW - energy level

KW - trap density

KW - trap states

UR - http://www.scopus.com/inward/record.url?scp=85205115654&partnerID=8YFLogxK

U2 - 10.3390/nano14181529

DO - 10.3390/nano14181529

M3 - Article

AN - SCOPUS:85205115654

SN - 2079-4991

VL - 14

JO - Nanomaterials

JF - Nanomaterials

IS - 18

M1 - 1529

ER -

Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

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Keywords

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