Projects per year
Personal profile
Personal profile
Dr. Jie Zhang is presently an assistant professor in the School of CHIPS, Taicang campus, Xian Jiaotong-liverpool University.Jie Zhang received her BSc degree from Jilin University in 2014. Then, she completed her PhD degree in 2019 from Peking University.In 2019-2023, Jie Zhang had a four-year postdoctoral experience in Hong Kong University of Science and Technology and Fudan University. Her main research interests include wide-bandgap semiconductor materials and devices.
Research interests
Wide-bandgap semiconductor materials
Semiconductor devices
Experience
Assistant Professor, Xian Jiaotong-Liverpool University - 2023 to present
Teaching
MES205TC, Digital Electronics II
Awards and honours
2021 Super postdoctor in Fudan University
2018 National scholarship in Peking University
Education/Academic qualification
Post-Doc., Academy for Engineering & Technology, Fudan University, -2023
Post-Doc., Department of Electronic & Computer Engineering , The Hong Kong University of Science and Technology, -2021
Ph.D., Peking University , - 2019
B.Sc., Jilin University,-2014
Person Types
- Staff
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Collaborations and top research areas from the last five years
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Projects
- 1 Active
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Exploring The Alignment of Realistic Applications of Project-Based Cases with Industry Needs and Expectations
Lu, Q., Vahed, A., Zhang, J., Chen, W. & Hajjaj, S. S. H.
1/03/24 → 31/12/25
Project: Internal Research Project
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Electronic properties of ZrO2 films fabricated via atomic layer deposition on 4H-SiC and Si substrates
Wang, X. R., Zeng, Y. X., Zhang, J., Huang, W., Ma, H. P. & Zhang, Q. C., 1 Jan 2024, In: Materials Research Express. 11, 1, 015902.Research output: Contribution to journal › Article › peer-review
Open Access -
Band alignment of TiO2/SiC and TiO2/Si heterojunction interface grown by atomic layer deposition
Zeng, Y. X., Wang, X. R., Zhang, J., Huang, W., Yang, L., Ma, H. P. & Zhang, Q. C., Jul 2023, In: Semiconductor Science and Technology. 38, 7, 075004.Research output: Contribution to journal › Article › peer-review
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Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates
Zhang, J., Yang, X., Ma, H., Zhang, Q. & Shen, B., 1 Feb 2023, In: AIP Advances. 13, 2, 025250.Research output: Contribution to journal › Article › peer-review
Open Access -
Electrical characterization of HfO2/4H-SiC and HfO2/Si MOS structures
Wang, X. R., Zhang, J., Ma, H. P. & Zhang, Q. C., 2023, Proceedings - 2022 19th China International Forum on Solid State Lighting and 2022 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022. Institute of Electrical and Electronics Engineers Inc., p. 34-37 4 p. (Proceedings - 2022 19th China International Forum on Solid State Lighting and 2022 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022).Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review
2 Citations (Scopus) -
First principles studies for electronic structure of β-Ga2O3 and GaAs
Yang, R., Zhang, J., Ma, H. P. & Zhang, Q. C., 2023, Proceedings - 2022 19th China International Forum on Solid State Lighting and 2022 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022. Institute of Electrical and Electronics Engineers Inc., p. 177-180 4 p. (Proceedings - 2022 19th China International Forum on Solid State Lighting and 2022 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022).Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review