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Vertical leakage induced current degradation and relevant traps with large lattice relaxation in AlGaN/GaN heterostructures on Si
Anqi Hu, Xuelin Yang*, Jianpeng Cheng, Chunyan Song, Jie Zhang, Yuxia Feng, Panfeng Ji, Fujun Xu, Yan Zhang, Zhijian Yang, Ning Tang, Weikun Ge, Xinqiang Wang, Zonghai Hu, Xia Guo, Bo Shen
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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