@inproceedings{0e76c7bfdf574a878ece4aa3b77680fa,
title = "Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers",
abstract = "In this work, the RRAM device with the structure of Ag/AlOx/MXene/ITO was fabricated with the stacked solution-processed switching layers. The device operated with a low voltage around ~2.0 V and exhibited a stable ON/OFF ratio larger than 10. Apart from excellent stability with endurance cycles of more than 100 and retention time of longer than 10 s, typical synaptic behaviors including long-term potentiation and depression (LTP/LTD) were also obtained, which had a positive influence on the following pattern recognition process and the average value of the recognition was around ~90%.",
keywords = "MXene, RRAM, pattern recognition, synaptic behaviors",
author = "Zongjie Shen and Chun Zhao and Mitrovic, {Ivona Z.} and Cezhou Zhao and Yina Liu and Li Yang",
note = "Funding Information: This research was funded in part by the Natural Science Foundation of the Jiangsu Higher Education Institutions of China Program (19KJB510059), the Suzhou Science and Technology Development Planning Project: Key Industrial Technology Innovation (SYG201924), and the Key Program Special Fund in XJTLU (KSF-P-02, KSF-T-03, KSF-A-04, KSF-A-05, KSF-A-07). Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 International Conference on IC Design and Technology, ICICDT 2021 ; Conference date: 15-09-2021 Through 17-09-2021",
year = "2021",
doi = "10.1109/ICICDT51558.2021.9626507",
language = "English",
series = "2021 International Conference on IC Design and Technology, ICICDT 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 International Conference on IC Design and Technology, ICICDT 2021",
}