Performance variation of solution-processed memristor induced by different top electrode

Zongjie Shen, Chun Zhao*, Yina Liu, Yanfei Qi, Ivona Z. Mitrovic, Li Yang, Cezhou Zhao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Al/TE (top electrode)/AlOx/Pt RRAM (resistive random access memory) devices with solution-processed spin-coated AlOx layers annealed at various temperatures (225/250/275 °C) exhibited typical bipolar resistive switching performance with low SET/RESET voltage (<4 V), larger ON/OFF ratio (>103) and excellent stability (retention time over 104 s and endurance cycles more than 100). Ni and TiN were chosen as the TE, respectively. Better RS characteristics were obtained on Ni/AlOx/Pt RRAM devices with lower operating voltage and better stability. In addition, the voltage variation between Ni/AlOx/Pt and TiN/AlOx/Pt RRAM devices was investigated. Compared with Ni/AlOx/Pt RRAM devices, TiN/AlOx/Pt devices operated with higher operation voltage at various annealing temperatures, which indicated the influence of work function difference (△ΦM) between TE and BE (bottom electrode). The greater the △ΦM, the more energy consumption and the higher operation voltage were demanded.

Original languageEnglish
Article number108132
JournalSolid-State Electronics
Publication statusPublished - Dec 2021


  • RRAM
  • Solution-processed
  • Work function difference

Cite this