PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model

Genquan Han*, Yue Yang, Pengfei Guo, Chunlei Zhan, Kain Lu Low, Kian Hui Goh, Bin Liu, Eng Huat Toh, Yee Chia Yeo

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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