Material Science
Al2O3
61%
Aluminum Oxide
12%
Annealing
6%
Capacitor
45%
Carbon Nanotube
27%
Density
24%
Devices
70%
Dielectric Material
100%
Differential Scanning Calorimetry
13%
Electrical Property
11%
Electrode
26%
Electronic Circuit
16%
Electronics
20%
Germanium
12%
Hafnium
24%
Impurity
22%
Ink
6%
Inverter
6%
Irradiation
36%
Material
6%
Metal Oxide
21%
Optoelectronics
8%
Oxidation Reaction
12%
Oxide
52%
Oxide Semiconductor
27%
Oxygen Vacancy
35%
Permittivity
12%
Powder
12%
Quantum Dot
6%
Resin
9%
Resistive Random-Access Memory
16%
Solution
18%
Surface
18%
Surface Treatment
12%
Temperature
42%
Thermogravimetric Analysis
13%
Thin Films
76%
Thin-Film Transistor
47%
Transistor
37%
Wettability
12%
Physics
Aqueous Solution
18%
Area
27%
Arrays
24%
Carbon Nanotube
12%
Cycles
6%
Dielectrics
52%
Differences
11%
Electric Potential
31%
Electrical Properties
5%
Electrodes
10%
Emission
6%
Energy Band
12%
Environment
14%
Gamma Radiation
6%
Hafnium
24%
Images
12%
Impurities
8%
Independent Variables
6%
Interfacial Energy
12%
Memory
12%
Metal Oxide Semiconductor
7%
Optoelectronics
12%
Oxide
44%
Performance
8%
Quality
6%
Radiation Effect
16%
Radiation Hardening
12%
Radiation Sources
11%
Ratios
21%
Recognition
14%
Resistive Switching
16%
Responses
30%
Roll
12%
Rupture
8%
Sites
27%
Stability
37%
Synapse
12%
Technology
10%
Temperature
8%
Thin Films
62%
Ultraviolet Radiation
5%
Variations
10%
Engineering
Applications
6%
Aqueous Solution
12%
Atomic Layer Deposition
20%
Characteristics
12%
Conductive Filament
12%
Current Effect
24%
Cycles
10%
Defects
5%
Dielectrics
37%
Dominant Mechanism
12%
Electric Potential
16%
Energy Band
12%
Forming
12%
Gate Bias
5%
High Resistance State
8%
Hybrid Optoelectronics
6%
Induced Charge
5%
Interface Trap
7%
Interfacial Energy
12%
Low Resistance
20%
Measurement
12%
Mechanisms
7%
Metallizations
12%
Nonvolatile Memory
6%
Ohmic Conduction
6%
Oxygen Vacancy
16%
Pepper Noise
6%
Performance
6%
Poole-Frenkel Emission
6%
Radiation
37%
Random Access Memory Device
10%
Ray Radiation
7%
Resistance Ratio
30%
Resistive
18%
Resistive Random Access Memory
18%
Stability
34%
Switching
6%
Synaptic Device
6%
Thin Films
15%