Material Science
Dielectric Material
100%
Thin Films
81%
Devices
75%
Al2O3
65%
Oxide
55%
Capacitor
48%
Temperature
44%
Irradiation
38%
Oxygen Vacancy
38%
Thin-Film Transistor
34%
Oxide Semiconductor
29%
Electrode
28%
Hafnium
26%
Density
25%
Impurity
24%
Metal Oxide
22%
Electronics
21%
Solution
19%
Surface
19%
Resistive Random-Access Memory
17%
Electronic Circuit
17%
Carbon Nanotube
16%
Thermogravimetric Analysis
14%
Differential Scanning Calorimetry
14%
Oxidation Reaction
13%
Aluminum Oxide
13%
Germanium
13%
Surface Treatment
13%
Powder
13%
Transistor
13%
Wettability
13%
Permittivity
13%
Electrical Property
12%
Resin
9%
Optoelectronics
8%
Material
6%
Inverter
6%
Annealing
6%
Ink
6%
Current-Voltage Characteristic
5%
Semiconductor Material
5%
Physics
Thin Films
66%
Dielectrics
56%
Oxide
47%
Stability
39%
Electric Potential
33%
Responses
32%
Sites
29%
Area
29%
Hafnium
26%
Arrays
26%
Ratios
22%
Aqueous Solution
19%
Radiation Effect
17%
Resistive Switching
17%
Environment
15%
Recognition
15%
Memory
13%
Radiation Hardening
13%
Synapse
13%
Carbon Nanotube
13%
Optoelectronics
13%
Images
13%
Roll
13%
Interfacial Energy
13%
Energy Band
13%
Differences
12%
Radiation Sources
12%
Electrodes
10%
Variations
10%
Technology
10%
Performance
9%
Temperature
8%
Impurities
8%
Rupture
8%
Metal Oxide Semiconductor
7%
Cycles
6%
Independent Variables
6%
Emission
6%
Gamma Radiation
6%
Quality
6%
Electrical Properties
5%
Ultraviolet Radiation
5%
Ionization
5%
Bionics
5%
Vision
5%
Engineering
Radiation
39%
Dielectrics
39%
Stability
36%
Resistance Ratio
32%
Current Effect
26%
Atomic Layer Deposition
21%
Low Resistance
21%
Resistive Random Access Memory
19%
Resistive
19%
Electric Potential
17%
Oxygen Vacancy
17%
Thin Films
16%
Characteristics
13%
Aqueous Solution
13%
Measurement
13%
Forming
13%
Metallizations
13%
Dominant Mechanism
13%
Conductive Filament
13%
Energy Band
13%
Interfacial Energy
13%
Random Access Memory Device
10%
Cycles
10%
High Resistance State
8%
Mechanisms
8%
Ray Radiation
7%
Interface Trap
7%
Poole-Frenkel Emission
6%
Ohmic Conduction
6%
Nonvolatile Memory
6%
Performance
6%
Applications
6%
Switching
6%
Defects
6%
Induced Charge
5%
Gate Bias
5%