Andrew Lam

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Phone+86 (0)512 88973369
EmailAndrew.Lamxjtlu.educn

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Research activity per year

8 Article
4 Conference Proceeding
1 Paper

8 results

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2004
Effects of atomic hydrogen on the selective area growth of Si and Si _1-xGe _x thin films on Si and SiO ₂ surfaces: Inhibition, nucleation, and growth
Schroeder, T. W., Lam, A. M., Ma, P. F. & Engstrom, J. R., May 2004, In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 22, 3, p. 578-593 16 p.
Research output: Contribution to journal › Article › peer-review
11 Citations (Scopus)
2001
Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation
Schroeder, T. W., Ma, P. F., Lam, A. M., Zheng, Y. J. & Engstrom, J. R., 1 Oct 2001, In: Applied Physics Letters. 79, 14, p. 2181-2183 3 p.
Research output: Contribution to journal › Article › peer-review
1 Citation (Scopus)
1999
Modeling of Ge surface segregation in vapor-phase deposited Si_{1 - x}Ge_x thin films
Zheng, Y. J., Lam, A. M. & Engstrom, J. R., 9 Aug 1999, In: Applied Physics Letters. 75, 6, p. 817-819 3 p.
Research output: Contribution to journal › Article › peer-review
16 Citations (Scopus)
1998
Direct in situ characterization of Ge surface segregation in strained Si_1-xGe_x epitaxial thin films
Lam, A. M., Zheng, Y. J. & Engstrom, J. R., 1998, In: Applied Physics Letters. 73, 14, p. 2027-2029 3 p.
Research output: Contribution to journal › Article › peer-review
16 Citations (Scopus)
The effect of strain on gas-surface reactivity in group-IV heteroepitaxial systems
Lam, A. M., Zheng, Y. J. & Engstrom, J. R., 31 Jul 1998, In: Chemical Physics Letters. 292, 1-2, p. 229-234 6 p.
Research output: Contribution to journal › Article › peer-review

Open Access
8 Citations (Scopus)
1997
Gas-surface reactivity in mixed-crystal systems: The reaction of GeH₄ and Ge₂H₆ on Si surfaces
Lam, A. M., Zheng, Y. J. & Engstrom, J. R., 10 Dec 1997, In: Surface Science. 393, 1-3, p. 205-221 17 p.
Research output: Contribution to journal › Article › peer-review

Open Access
24 Citations (Scopus)
1996

Maximum Stable Drop Diameter in Stirred Dispersions
Lam, A., Sathyagal, A. N., Kumar, S. & Ramkrishna, D., Jun 1996, In: AIChE Journal. 42, 6, p. 1547-1552 6 p.
Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)
Supersonic molecular beam studies of the dissociative chemisorption of GeH₄ and Ge₂H₆ on the Ge(100) and Ge(111) surfaces
Jones, M. E., Roadman, S. E., Lam, A. M., Eres, G. & Engstrom, J. R., 1996, In: Journal of Chemical Physics. 105, 16, p. 7140-7151 12 p.
Research output: Contribution to journal › Article › peer-review
21 Citations (Scopus)

Andrew Lam

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