Abstract
We report the ultimate performance of a double-gate ultrathin body (DG-UTB) FET employing materials from group IV, III-V, and 2-D materials based on International Technology Roadmap for Semiconductors (ITRS) projected specifications for high-performance (HP) and low-power (LP) technologies. The band structures of the channel materials were obtained using the sp3d5s∗ tight binding model and the firstprinciples density functional theory. The ballistic performance of FETs designed based on the ITRS specifications for 2018 and beyond was evaluated via the semiclassical ballistic transport model. The leakage current due to direct source-to-drain tunneling was calculated based on Wentzel-Kramers-Brillouin approximation. For nFET used in the HP technology, GaSb nFET has the best voltage scalability followed by Ge nFET in 2026. It was found that ION of InAs and In0.3 Ga0.7Sb nFETs is among the lowest, and they require larger power supply voltage (VDD) among III-V semiconductors considered to achieve ION of silicon nFET. However, they show lower power delay product (PDP) due to their smaller electron effective mass, resulting in higher carrier velocity. Ge pFET offers the best voltage scalability for pFET used in the HP technology. For the voltage scalability assessment based on the requirements for the LP technology, MOSFETs based on Si offer better performance in terms of ION and PDP than MOSFETs based on 2-D materials. Among the 2-D materials studied, black phosphorus and silicane MOSFETs exhibit higher ION and better voltage scalability and PDP.
Original language | English |
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Article number | 7372402 |
Pages (from-to) | 773-780 |
Number of pages | 8 |
Journal | IEEE Transactions on Electron Devices |
Volume | 63 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Feb 2016 |
Externally published | Yes |
Keywords
- 2-D transition metal dichalcogenides (TMDs)
- Germanane
- Germanium
- III-V materials
- Silicane
- Voltage scalability