Theoretical investigation of Gibb's free energy and phase diagram for InxGa1-xN nano-film system

Shorif Rahamatullah; Md Soyaeb Hasan; Md Rafiqul Islam; Md Zahangir Alom; Ibrahim Mustafa Mehedi

doi:10.1109/ICIEV.2016.7760072

Theoretical investigation of Gibb's free energy and phase diagram for In_xGa_1-xN nano-film system

Shorif Rahamatullah, Md Soyaeb Hasan, Md Rafiqul Islam, Md Zahangir Alom, Ibrahim Mustafa Mehedi

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

Abstract

The models for investigating the phase diagram of InGaN thin films have been anticipated by considering the effects of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. Total Gibb's free energy varies with Indium composition and thickness of the epitaxial thin film. The calculated results indicate that over critical thickness, energy of the films increases with increasing thickness. The phase diagrams of InGaN films grown on GaN substrate have been calculated. There is a small effect of surface energies of solid phases on the phase diagrams of epitaxial film. With increasing the thickness of InGaN films the wurtzite phase is found to be decreased. This is due to the increase of thickness, misfit dislocations and the commencing of phase separation. Accurate information of InGaN nano film is applicable for the innovation of III-nitride based nano-electronics system.

Original language	English
Title of host publication	2016 5th International Conference on Informatics, Electronics and Vision, ICIEV 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	598-601
Number of pages	4
ISBN (Electronic)	9781509012695
DOIs	https://doi.org/10.1109/ICIEV.2016.7760072
Publication status	Published - 28 Nov 2016
Externally published	Yes
Event	5th International Conference on Informatics, Electronics and Vision, ICIEV 2016 - Dhaka, Bangladesh Duration: 13 May 2016 → 14 May 2016

Publication series

Name	2016 5th International Conference on Informatics, Electronics and Vision, ICIEV 2016

Conference

Conference	5th International Conference on Informatics, Electronics and Vision, ICIEV 2016
Country/Territory	Bangladesh
City	Dhaka
Period	13/05/16 → 14/05/16

Keywords

Dislocation
Gibb's Free Energy
InN-GaN
Phase diagram
Thin film

Access to Document

10.1109/ICIEV.2016.7760072

Cite this

Rahamatullah, S., Hasan, M. S., Islam, M. R., Alom, M. Z., & Mehedi, I. M. (2016). Theoretical investigation of Gibb's free energy and phase diagram for In_xGa_1-xN nano-film system. In 2016 5th International Conference on Informatics, Electronics and Vision, ICIEV 2016 (pp. 598-601). Article 7760072 (2016 5th International Conference on Informatics, Electronics and Vision, ICIEV 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIEV.2016.7760072

Rahamatullah, Shorif ; Hasan, Md Soyaeb ; Islam, Md Rafiqul et al. / Theoretical investigation of Gibb's free energy and phase diagram for In_xGa_1-xN nano-film system. 2016 5th International Conference on Informatics, Electronics and Vision, ICIEV 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 598-601 (2016 5th International Conference on Informatics, Electronics and Vision, ICIEV 2016).

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title = "Theoretical investigation of Gibb's free energy and phase diagram for InxGa1-xN nano-film system",

abstract = "The models for investigating the phase diagram of InGaN thin films have been anticipated by considering the effects of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. Total Gibb's free energy varies with Indium composition and thickness of the epitaxial thin film. The calculated results indicate that over critical thickness, energy of the films increases with increasing thickness. The phase diagrams of InGaN films grown on GaN substrate have been calculated. There is a small effect of surface energies of solid phases on the phase diagrams of epitaxial film. With increasing the thickness of InGaN films the wurtzite phase is found to be decreased. This is due to the increase of thickness, misfit dislocations and the commencing of phase separation. Accurate information of InGaN nano film is applicable for the innovation of III-nitride based nano-electronics system.",

keywords = "Dislocation, Gibb's Free Energy, InN-GaN, Phase diagram, Thin film",

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Rahamatullah, S, Hasan, MS, Islam, MR, Alom, MZ & Mehedi, IM 2016, Theoretical investigation of Gibb's free energy and phase diagram for In_xGa_1-xN nano-film system. in 2016 5th International Conference on Informatics, Electronics and Vision, ICIEV 2016., 7760072, 2016 5th International Conference on Informatics, Electronics and Vision, ICIEV 2016, Institute of Electrical and Electronics Engineers Inc., pp. 598-601, 5th International Conference on Informatics, Electronics and Vision, ICIEV 2016, Dhaka, Bangladesh, 13/05/16. https://doi.org/10.1109/ICIEV.2016.7760072

Theoretical investigation of Gibb's free energy and phase diagram for In_xGa_1-xN nano-film system. / Rahamatullah, Shorif; Hasan, Md Soyaeb; Islam, Md Rafiqul et al.
2016 5th International Conference on Informatics, Electronics and Vision, ICIEV 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 598-601 7760072 (2016 5th International Conference on Informatics, Electronics and Vision, ICIEV 2016).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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AU - Alom, Md Zahangir

AU - Mehedi, Ibrahim Mustafa

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AB - The models for investigating the phase diagram of InGaN thin films have been anticipated by considering the effects of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. Total Gibb's free energy varies with Indium composition and thickness of the epitaxial thin film. The calculated results indicate that over critical thickness, energy of the films increases with increasing thickness. The phase diagrams of InGaN films grown on GaN substrate have been calculated. There is a small effect of surface energies of solid phases on the phase diagrams of epitaxial film. With increasing the thickness of InGaN films the wurtzite phase is found to be decreased. This is due to the increase of thickness, misfit dislocations and the commencing of phase separation. Accurate information of InGaN nano film is applicable for the innovation of III-nitride based nano-electronics system.

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Rahamatullah S, Hasan MS, Islam MR, Alom MZ, Mehedi IM. Theoretical investigation of Gibb's free energy and phase diagram for In_xGa_1-xN nano-film system. In 2016 5th International Conference on Informatics, Electronics and Vision, ICIEV 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 598-601. 7760072. (2016 5th International Conference on Informatics, Electronics and Vision, ICIEV 2016). doi: 10.1109/ICIEV.2016.7760072