Temperature-Dependence of Aluminum Implanted 4H-SiC after High-Temperature Annealing

Fanzhengshu Wu, Hongping Ma, Jie Zhang, Xinlan Hou, Yuanlan Zhang, Qingchun Zhang*

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

1 Citation (Scopus)

Abstract

This study explores the effect of implantation temperature on defect information at a total implantation dose of 1×1014 cm-2. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to investigate defect formation of 4H-SiC in which a medium dose of aluminum ions had been implanted at different temperatures. In the XRD spectrum, a subtle difference was observed among samples, while the TEM images show that defect formation after post-implantation annealing was highly similar on the three samples. On the other hand, secondary ion mass spectroscopy (SIMS) indicates that the implanted temperature has no significant effect on the ions' concentration distribution. The study concludes that room temperature can be used instead of high temperature in the implantation process at such a medium dose.

Original languageEnglish
Title of host publication2021 18th China International Forum on Solid State Lighting and 2021 7th International Forum on Wide Bandgap Semiconductors, SSLChina
Subtitle of host publicationIFWS 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages71-73
Number of pages3
ISBN (Electronic)9781665495462
DOIs
Publication statusPublished - 2021
Externally publishedYes
Event18th China International Forum on Solid State Lighting and 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021 - Shenzhen, Guangdong, China
Duration: 6 Dec 20218 Dec 2021

Publication series

Name2021 18th China International Forum on Solid State Lighting and 2021 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021

Conference

Conference18th China International Forum on Solid State Lighting and 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021
Country/TerritoryChina
CityShenzhen, Guangdong
Period6/12/218/12/21

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