TY - GEN
T1 - Temperature-Dependence of Aluminum Implanted 4H-SiC after High-Temperature Annealing
AU - Wu, Fanzhengshu
AU - Ma, Hongping
AU - Zhang, Jie
AU - Hou, Xinlan
AU - Zhang, Yuanlan
AU - Zhang, Qingchun
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - This study explores the effect of implantation temperature on defect information at a total implantation dose of 1×1014 cm-2. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to investigate defect formation of 4H-SiC in which a medium dose of aluminum ions had been implanted at different temperatures. In the XRD spectrum, a subtle difference was observed among samples, while the TEM images show that defect formation after post-implantation annealing was highly similar on the three samples. On the other hand, secondary ion mass spectroscopy (SIMS) indicates that the implanted temperature has no significant effect on the ions' concentration distribution. The study concludes that room temperature can be used instead of high temperature in the implantation process at such a medium dose.
AB - This study explores the effect of implantation temperature on defect information at a total implantation dose of 1×1014 cm-2. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to investigate defect formation of 4H-SiC in which a medium dose of aluminum ions had been implanted at different temperatures. In the XRD spectrum, a subtle difference was observed among samples, while the TEM images show that defect formation after post-implantation annealing was highly similar on the three samples. On the other hand, secondary ion mass spectroscopy (SIMS) indicates that the implanted temperature has no significant effect on the ions' concentration distribution. The study concludes that room temperature can be used instead of high temperature in the implantation process at such a medium dose.
UR - http://www.scopus.com/inward/record.url?scp=85125340528&partnerID=8YFLogxK
U2 - 10.1109/SSLChinaIFWS54608.2021.9675221
DO - 10.1109/SSLChinaIFWS54608.2021.9675221
M3 - Conference Proceeding
AN - SCOPUS:85125340528
T3 - 2021 18th China International Forum on Solid State Lighting and 2021 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021
SP - 71
EP - 73
BT - 2021 18th China International Forum on Solid State Lighting and 2021 7th International Forum on Wide Bandgap Semiconductors, SSLChina
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 18th China International Forum on Solid State Lighting and 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021
Y2 - 6 December 2021 through 8 December 2021
ER -