Hu, A., Yang, X., Cheng, J., Guo, L., Zhang, J., Ge, W., Wang, M., Xu, F., Tang, N., Qin, Z., Wang, X., & Shen, B. (2016). Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements. Applied Physics Letters, 108(4), Article 042107. https://doi.org/10.1063/1.4941027
Hu, Anqi ; Yang, Xuelin ; Cheng, Jianpeng et al. / Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements. In: Applied Physics Letters. 2016 ; Vol. 108, No. 4.
@article{57fe4e6f2073428284afc5b4009f3233,
title = "Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements",
abstract = "We present a methodology and the corresponding experimental results to identify the exact location of the traps that induce hot electron trapping in AlGaN/GaN heterostructures grown on Si substrates. The methodology is based on a combination of lateral and vertical electrical stress measurements employing three ohmic terminals on the test sample structure with different GaN buffer designs. By monitoring the evolution of the lateral current during lateral as well as vertical stress application, we investigate the trapping/detrapping behaviors of the hot electrons and identify that the traps correlated with current degradation are in fact located in the GaN buffer layers. The trap activation energies (0.38-0.39 eV and 0.57-0.59 eV) extracted from either lateral or vertical stress measurements are in good agreement with each other, also confirming the identification. By further comparing the trapping behaviors in two samples with different growth conditions of an unintentionally doped GaN layer, we conclude that the traps are most likely in the unintentionally doped GaN layer but of different origins. It is suggested that the 0.38-0.39 eV trap is related to residual carbon incorporation while the 0.57-0.59 eV trap is correlated with native defects or complexes.",
author = "Anqi Hu and Xuelin Yang and Jianpeng Cheng and Lei Guo and Jie Zhang and Weikun Ge and Maojun Wang and Fujun Xu and Ning Tang and Zhixin Qin and Xinqiang Wang and Bo Shen",
note = "Publisher Copyright: {\textcopyright} 2016 AIP Publishing LLC.",
year = "2016",
month = jan,
day = "25",
doi = "10.1063/1.4941027",
language = "English",
volume = "108",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "4",
}
Hu, A, Yang, X, Cheng, J, Guo, L, Zhang, J, Ge, W, Wang, M, Xu, F, Tang, N, Qin, Z, Wang, X & Shen, B 2016, 'Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements', Applied Physics Letters, vol. 108, no. 4, 042107. https://doi.org/10.1063/1.4941027
Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements. / Hu, Anqi; Yang, Xuelin; Cheng, Jianpeng et al.
In:
Applied Physics Letters, Vol. 108, No. 4, 042107, 25.01.2016.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements
AU - Hu, Anqi
AU - Yang, Xuelin
AU - Cheng, Jianpeng
AU - Guo, Lei
AU - Zhang, Jie
AU - Ge, Weikun
AU - Wang, Maojun
AU - Xu, Fujun
AU - Tang, Ning
AU - Qin, Zhixin
AU - Wang, Xinqiang
AU - Shen, Bo
N1 - Publisher Copyright:
© 2016 AIP Publishing LLC.
PY - 2016/1/25
Y1 - 2016/1/25
N2 - We present a methodology and the corresponding experimental results to identify the exact location of the traps that induce hot electron trapping in AlGaN/GaN heterostructures grown on Si substrates. The methodology is based on a combination of lateral and vertical electrical stress measurements employing three ohmic terminals on the test sample structure with different GaN buffer designs. By monitoring the evolution of the lateral current during lateral as well as vertical stress application, we investigate the trapping/detrapping behaviors of the hot electrons and identify that the traps correlated with current degradation are in fact located in the GaN buffer layers. The trap activation energies (0.38-0.39 eV and 0.57-0.59 eV) extracted from either lateral or vertical stress measurements are in good agreement with each other, also confirming the identification. By further comparing the trapping behaviors in two samples with different growth conditions of an unintentionally doped GaN layer, we conclude that the traps are most likely in the unintentionally doped GaN layer but of different origins. It is suggested that the 0.38-0.39 eV trap is related to residual carbon incorporation while the 0.57-0.59 eV trap is correlated with native defects or complexes.
AB - We present a methodology and the corresponding experimental results to identify the exact location of the traps that induce hot electron trapping in AlGaN/GaN heterostructures grown on Si substrates. The methodology is based on a combination of lateral and vertical electrical stress measurements employing three ohmic terminals on the test sample structure with different GaN buffer designs. By monitoring the evolution of the lateral current during lateral as well as vertical stress application, we investigate the trapping/detrapping behaviors of the hot electrons and identify that the traps correlated with current degradation are in fact located in the GaN buffer layers. The trap activation energies (0.38-0.39 eV and 0.57-0.59 eV) extracted from either lateral or vertical stress measurements are in good agreement with each other, also confirming the identification. By further comparing the trapping behaviors in two samples with different growth conditions of an unintentionally doped GaN layer, we conclude that the traps are most likely in the unintentionally doped GaN layer but of different origins. It is suggested that the 0.38-0.39 eV trap is related to residual carbon incorporation while the 0.57-0.59 eV trap is correlated with native defects or complexes.
UR - http://www.scopus.com/inward/record.url?scp=84957030793&partnerID=8YFLogxK
U2 - 10.1063/1.4941027
DO - 10.1063/1.4941027
M3 - Article
AN - SCOPUS:84957030793
SN - 0003-6951
VL - 108
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
M1 - 042107
ER -
Hu A, Yang X, Cheng J, Guo L, Zhang J, Ge W et al. Spatial identification of traps in AlGaN/GaN heterostructures by the combination of lateral and vertical electrical stress measurements. Applied Physics Letters. 2016 Jan 25;108(4):042107. doi: 10.1063/1.4941027