Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with 1010 High On/Off Current Ratio and Low Specific On-Resistance

Yue Li; Bo Shen; Maojun Wang; Ruiyuan Yin; Jie Zhang; Ming Tao; Bing Xie; Yilong Hao; Xuelin Yang; Cheng P. Wen

doi:10.1109/LED.2020.2968392

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with 10¹⁰ High On/Off Current Ratio and Low Specific On-Resistance

Yue Li, Bo Shen, Maojun Wang^*, Ruiyuan Yin, Jie Zhang, Ming Tao, Bing Xie, Yilong Hao, Xuelin Yang, Cheng P. Wen

^*Corresponding author for this work

Peking University

Research output: Contribution to journal › Article › peer-review

61 Citations (Scopus)

Abstract

In this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is 1.6× 10⁸ cm^-2 with a GaN drift layer thickness of 4.5μ m. The fabricated prototype GaN SBD delivers a high on/off current ratio of 10¹⁰, a high forward current density of 1.6 kA/cm²@3 V, a low specific on-resistance of 1.1 mΩ·cm², and a low ideality factor of 1.23.

Original language	English
Article number	8964312
Pages (from-to)	329-332
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	3
DOIs	https://doi.org/10.1109/LED.2020.2968392
Publication status	Published - Mar 2020
Externally published	Yes

Keywords

dislocation bending
GaN on Si
Schottky barrier diode
vertical structure

Access to Document

10.1109/LED.2020.2968392

Cite this

@article{00049159dce84779baf5b00495cb3eac,

title = "Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with 1010 High On/Off Current Ratio and Low Specific On-Resistance",

abstract = "In this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is 1.6× 108 cm-2 with a GaN drift layer thickness of 4.5μ m. The fabricated prototype GaN SBD delivers a high on/off current ratio of 1010, a high forward current density of 1.6 kA/cm2@3 V, a low specific on-resistance of 1.1 mΩ·cm2, and a low ideality factor of 1.23.",

keywords = "dislocation bending, GaN on Si, Schottky barrier diode, vertical structure",

author = "Yue Li and Bo Shen and Maojun Wang and Ruiyuan Yin and Jie Zhang and Ming Tao and Bing Xie and Yilong Hao and Xuelin Yang and Wen, {Cheng P.}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2020",

month = mar,

doi = "10.1109/LED.2020.2968392",

language = "English",

volume = "41",

pages = "329--332",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "3",

}

TY - JOUR

T1 - Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with 1010 High On/Off Current Ratio and Low Specific On-Resistance

AU - Li, Yue

AU - Shen, Bo

AU - Wang, Maojun

AU - Yin, Ruiyuan

AU - Zhang, Jie

AU - Tao, Ming

AU - Xie, Bing

AU - Hao, Yilong

AU - Yang, Xuelin

AU - Wen, Cheng P.

PY - 2020/3

Y1 - 2020/3

N2 - In this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is 1.6× 108 cm-2 with a GaN drift layer thickness of 4.5μ m. The fabricated prototype GaN SBD delivers a high on/off current ratio of 1010, a high forward current density of 1.6 kA/cm2@3 V, a low specific on-resistance of 1.1 mΩ·cm2, and a low ideality factor of 1.23.

AB - In this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is 1.6× 108 cm-2 with a GaN drift layer thickness of 4.5μ m. The fabricated prototype GaN SBD delivers a high on/off current ratio of 1010, a high forward current density of 1.6 kA/cm2@3 V, a low specific on-resistance of 1.1 mΩ·cm2, and a low ideality factor of 1.23.

KW - dislocation bending

KW - GaN on Si

KW - Schottky barrier diode

KW - vertical structure

UR - http://www.scopus.com/inward/record.url?scp=85080906781&partnerID=8YFLogxK

U2 - 10.1109/LED.2020.2968392

DO - 10.1109/LED.2020.2968392

M3 - Article

AN - SCOPUS:85080906781

SN - 0741-3106

VL - 41

SP - 329

EP - 332

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 8964312

ER -

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with 10¹⁰ High On/Off Current Ratio and Low Specific On-Resistance

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this