Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

Kian Hui Goh; Yuanbing Cheng; Kain Lu Low; Eugene Yu Jin Kong; Ching Kean Chia; Eng Huat Toh; Yee Chia Yeo

doi:10.1063/1.4784065

Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

Kian Hui Goh^*, Yuanbing Cheng, Kain Lu Low, Eugene Yu Jin Kong, Ching Kean Chia, Eng Huat Toh, Yee Chia Yeo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A study on the physical modeling of the growth of GaAs on Ge fins is reported. Experimental data on selective growth of high-quality gallium arsenide (GaAs) on germanium (Ge) fins with different orientations formed on 10° offcut germanium-on-insulator (GeOI) substrate were used. Extensive physical characterization using secondary electron microscope (SEM) and transmission electron microscope (TEM) was performed to obtain the dependence of the GaAs growth rates on crystallographic directions. Our physical model explains the shapes of GaAs crystals grown on the Ge fins having different in-plane orientations.

Original language	English
Article number	044301
Journal	Journal of Applied Physics
Volume	113
Issue number	4
DOIs	https://doi.org/10.1063/1.4784065
Publication status	Published - 28 Jan 2013
Externally published	Yes

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10.1063/1.4784065

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title = "Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate",

abstract = "A study on the physical modeling of the growth of GaAs on Ge fins is reported. Experimental data on selective growth of high-quality gallium arsenide (GaAs) on germanium (Ge) fins with different orientations formed on 10° offcut germanium-on-insulator (GeOI) substrate were used. Extensive physical characterization using secondary electron microscope (SEM) and transmission electron microscope (TEM) was performed to obtain the dependence of the GaAs growth rates on crystallographic directions. Our physical model explains the shapes of GaAs crystals grown on the Ge fins having different in-plane orientations.",

author = "Goh, {Kian Hui} and Yuanbing Cheng and {Lu Low}, Kain and {Yu Jin Kong}, Eugene and Chia, {Ching Kean} and Toh, {Eng Huat} and Yeo, {Yee Chia}",

year = "2013",

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doi = "10.1063/1.4784065",

language = "English",

volume = "113",

journal = "Journal of Applied Physics",

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T1 - Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

AU - Goh, Kian Hui

AU - Cheng, Yuanbing

AU - Lu Low, Kain

AU - Yu Jin Kong, Eugene

AU - Chia, Ching Kean

AU - Toh, Eng Huat

AU - Yeo, Yee Chia

PY - 2013/1/28

Y1 - 2013/1/28

N2 - A study on the physical modeling of the growth of GaAs on Ge fins is reported. Experimental data on selective growth of high-quality gallium arsenide (GaAs) on germanium (Ge) fins with different orientations formed on 10° offcut germanium-on-insulator (GeOI) substrate were used. Extensive physical characterization using secondary electron microscope (SEM) and transmission electron microscope (TEM) was performed to obtain the dependence of the GaAs growth rates on crystallographic directions. Our physical model explains the shapes of GaAs crystals grown on the Ge fins having different in-plane orientations.

AB - A study on the physical modeling of the growth of GaAs on Ge fins is reported. Experimental data on selective growth of high-quality gallium arsenide (GaAs) on germanium (Ge) fins with different orientations formed on 10° offcut germanium-on-insulator (GeOI) substrate were used. Extensive physical characterization using secondary electron microscope (SEM) and transmission electron microscope (TEM) was performed to obtain the dependence of the GaAs growth rates on crystallographic directions. Our physical model explains the shapes of GaAs crystals grown on the Ge fins having different in-plane orientations.

UR - http://www.scopus.com/inward/record.url?scp=84873660197&partnerID=8YFLogxK

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DO - 10.1063/1.4784065

M3 - Article

AN - SCOPUS:84873660197

SN - 0021-8979

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 044301

ER -

Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

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