PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model

Genquan Han; Yue Yang; Pengfei Guo; Chunlei Zhan; Kain Lu Low; Kian Hui Goh; Bin Liu; Eng Huat Toh; Yee Chia Yeo

doi:10.1109/VLSI-TSA.2012.6210114

PBTI characteristics of N-channel tunneling field effect transistor with HfO ₂ gate dielectric: New insights and physical model

Genquan Han^*, Yue Yang, Pengfei Guo, Chunlei Zhan, Kain Lu Low, Kian Hui Goh, Bin Liu, Eng Huat Toh, Yee Chia Yeo

^*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

7 Citations (Scopus)

Abstract

We report the first comparison study of BTI characteristics of nTFET and nMOSFET with the same high-k/metal gate stack fabricated on the same wafer. NTFETs demonstrate smaller ΔV _TH and G _m loss in comparison with the nMOSFET under the same PBTI stress. We speculate that the trapped electrons density in HfO ₂ gate dielectric above the tunnel junction (TJ) is lower than that above the channel, which leads to the superior PBTI characteristics in nTFET.

Original language	English
Title of host publication	2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers
DOIs	https://doi.org/10.1109/VLSI-TSA.2012.6210114
Publication status	Published - 2012
Externally published	Yes
Event	2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Hsinchu, Taiwan, Province of China Duration: 23 Apr 2012 → 25 Apr 2012

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)	1930-8868

Conference

Conference	2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	23/04/12 → 25/04/12

Access to Document

10.1109/VLSI-TSA.2012.6210114

Cite this

Han, G., Yang, Y., Guo, P., Zhan, C., Low, K. L., Goh, K. H., Liu, B., Toh, E. H., & Yeo, Y. C. (2012). PBTI characteristics of N-channel tunneling field effect transistor with HfO ₂ gate dielectric: New insights and physical model. In 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers Article 6210114 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VLSI-TSA.2012.6210114

Han, Genquan ; Yang, Yue ; Guo, Pengfei et al. / PBTI characteristics of N-channel tunneling field effect transistor with HfO ₂ gate dielectric : New insights and physical model. 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{337ca204511c4009a27f1762a05bfd01,

title = "PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model",

abstract = "We report the first comparison study of BTI characteristics of nTFET and nMOSFET with the same high-k/metal gate stack fabricated on the same wafer. NTFETs demonstrate smaller ΔV TH and G m loss in comparison with the nMOSFET under the same PBTI stress. We speculate that the trapped electrons density in HfO 2 gate dielectric above the tunnel junction (TJ) is lower than that above the channel, which leads to the superior PBTI characteristics in nTFET.",

author = "Genquan Han and Yue Yang and Pengfei Guo and Chunlei Zhan and Low, {Kain Lu} and Goh, {Kian Hui} and Bin Liu and Toh, {Eng Huat} and Yeo, {Yee Chia}",

year = "2012",

doi = "10.1109/VLSI-TSA.2012.6210114",

language = "English",

isbn = "9781457720840",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

booktitle = "2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers",

note = "2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 ; Conference date: 23-04-2012 Through 25-04-2012",

}

Han, G, Yang, Y, Guo, P, Zhan, C, Low, KL, Goh, KH, Liu, B, Toh, EH & Yeo, YC 2012, PBTI characteristics of N-channel tunneling field effect transistor with HfO ₂ gate dielectric: New insights and physical model. in 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers., 6210114, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012, Hsinchu, Taiwan, Province of China, 23/04/12. https://doi.org/10.1109/VLSI-TSA.2012.6210114

PBTI characteristics of N-channel tunneling field effect transistor with HfO ₂ gate dielectric: New insights and physical model. / Han, Genquan; Yang, Yue; Guo, Pengfei et al.
2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. 6210114 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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AU - Liu, Bin

AU - Toh, Eng Huat

AU - Yeo, Yee Chia

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AB - We report the first comparison study of BTI characteristics of nTFET and nMOSFET with the same high-k/metal gate stack fabricated on the same wafer. NTFETs demonstrate smaller ΔV TH and G m loss in comparison with the nMOSFET under the same PBTI stress. We speculate that the trapped electrons density in HfO 2 gate dielectric above the tunnel junction (TJ) is lower than that above the channel, which leads to the superior PBTI characteristics in nTFET.

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Han G, Yang Y, Guo P, Zhan C, Low KL, Goh KH et al. PBTI characteristics of N-channel tunneling field effect transistor with HfO ₂ gate dielectric: New insights and physical model. In 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. 6210114. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VLSI-TSA.2012.6210114