Projects per year
Abstract
Wide band gap metal oxide semiconductor catalysts mostly exhibit very huge variations of catalytic reaction activities and pathways depending on the preparation conditions, unlike metallic catalyst materials. Atomic-scale modeling and ab initio calculations are extremely challenging for metal oxide semiconductor catalysts because of the two main reasons: i) large discrepancies between computational predictions and experiments, ii) typical cell size limitations in modeling for dilute level doping (<1020/cm3) cocatalyst size-dependency (diameters >3nm). In this study, as a new ground-breaking methodology, we used a combination of density functional theory (DFT) calculations and a newly derived analytic model to systematically investigate the mechanisms of catalytic methane (CH4) oxidation activity change of CeO2. The key hypothesis that the catalytic methane oxidation reaction be determined by the Fermi level change in CeO2 was well demonstrated via comparison with our multi-scale simulation and several literatures. Our new method was found to give predictions in the catalytic activity of wide band gap semiconductors for variations in defect concentrations and cocatalyst coverage with advanced efficiency and accuracy, overcoming the typical model size limitation and inaccuracy problems of DFT calculations.
Original language | English |
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Article number | D4TA03595J |
Journal | Journal of Materials Chemistry A |
DOIs | |
Publication status | Published - 29 Aug 2024 |
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Dive into the research topics of 'Overcoming the Limitations of Atomic-Scale Simulations on Semiconductor Catalysis with Changing Fermi Level and Surface Treatment'. Together they form a unique fingerprint.Projects
- 2 Active
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Combined Fluid Dynamics and Electrochemistry Study for Advanced Catalyst Design with Considerations of Catalyst Morphology and Facility Conditions
1/01/24 → 31/12/26
Project: Internal Research Project
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Suzhou Industrial Park High Quality Innovation Platform of Functional Molecular Materials and Devices
Yang, L., Liu, C., Lu, Q., Papadikis, K., Choi, H., Lin, Y., Xue, X., Huang, X., Ding, M., Wang, X., Zhang, Q., JIN, X., Matziari, M., Ding, L., Li, D., Dennis, J., Dong, Q., 张开周, 由冬琦 & 郜明文
1/09/23 → 30/08/25
Project: Governmental Research Project
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Theory of photochemical and catalytic reactions on wide band gap semiconductors
Heechae Choi (Invited speaker)
28 Nov 2024 → 30 Nov 2024Activity: Talk or presentation › Presentation at conference/workshop/seminar
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Mathematical model for nanoparticular Schottky-junction photoanode design
Heechae Choi (Invited speaker)
30 Sept 2024 → 1 Oct 2024Activity: Talk or presentation › Invited talk