TY - JOUR
T1 - Migration of carbon from Ga sites to N sites in GaN
T2 - A combined PAS and hybrid DFT study
AU - Xu, Yue
AU - Li, Zhiqiao
AU - Yang, Xuelin
AU - Shi, Lin
AU - Zhang, Peng
AU - Cao, Xingzhong
AU - Nie, Jianfeng
AU - Wu, Shan
AU - Zhang, Jie
AU - Feng, Yuxia
AU - Zhang, Yan
AU - Wang, Xinqiang
AU - Ge, Weikun
AU - Xu, Ke
AU - Shen, Bo
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019
Y1 - 2019
N2 - Carbon (C) is of great importance to realize semi-insulating gallium nitride (GaN) for power electronic devices. We demonstrate that C can migrate from Ga sites to N sites after high temperature annealing of C doped GaN. The migration process is revealed through the observation of the generated Ga vacancies-related defects after annealing by positron annihilation spectroscopy. The activation energy of this migration process is estimated to be 2.5-2.8 eV from the temperature dependent annealing experiments, which is well consistent with the theoretical results from first-principles calculations.
AB - Carbon (C) is of great importance to realize semi-insulating gallium nitride (GaN) for power electronic devices. We demonstrate that C can migrate from Ga sites to N sites after high temperature annealing of C doped GaN. The migration process is revealed through the observation of the generated Ga vacancies-related defects after annealing by positron annihilation spectroscopy. The activation energy of this migration process is estimated to be 2.5-2.8 eV from the temperature dependent annealing experiments, which is well consistent with the theoretical results from first-principles calculations.
UR - http://www.scopus.com/inward/record.url?scp=85072747894&partnerID=8YFLogxK
U2 - 10.7567/1347-4065/ab3548
DO - 10.7567/1347-4065/ab3548
M3 - Article
AN - SCOPUS:85072747894
SN - 0021-4922
VL - 58
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 9
M1 - 090901
ER -