Migration of carbon from Ga sites to N sites in GaN: A combined PAS and hybrid DFT study

Yue Xu, Zhiqiao Li, Xuelin Yang, Lin Shi, Peng Zhang, Xingzhong Cao, Jianfeng Nie, Shan Wu, Jie Zhang, Yuxia Feng, Yan Zhang, Xinqiang Wang, Weikun Ge, Ke Xu, Bo Shen

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Carbon (C) is of great importance to realize semi-insulating gallium nitride (GaN) for power electronic devices. We demonstrate that C can migrate from Ga sites to N sites after high temperature annealing of C doped GaN. The migration process is revealed through the observation of the generated Ga vacancies-related defects after annealing by positron annihilation spectroscopy. The activation energy of this migration process is estimated to be 2.5-2.8 eV from the temperature dependent annealing experiments, which is well consistent with the theoretical results from first-principles calculations.

Original languageEnglish
Article number090901
JournalJapanese Journal of Applied Physics
Volume58
Issue number9
DOIs
Publication statusPublished - 2019
Externally publishedYes

Fingerprint

Dive into the research topics of 'Migration of carbon from Ga sites to N sites in GaN: A combined PAS and hybrid DFT study'. Together they form a unique fingerprint.

Cite this