TY - JOUR
T1 - Influence of Rapid Thermal Annealing on the Characteristics of Sn-Doped Ga2O3 Films Fabricated Using Plasma-Enhanced Atomic Layer Deposition
AU - Shen, Yi
AU - Ma, Hong Ping
AU - Wang, Zhen Yu
AU - Gu, Lin
AU - Zhang, Jie
AU - Li, Ao
AU - Yang, Ming Yang
AU - Zhang, Qing Chun
N1 - Publisher Copyright:
© 2023 by the authors.
PY - 2023/2
Y1 - 2023/2
N2 - In this work, Sn-doped Ga2O3 films fabricated using plasma-enhanced atomic layer deposition were treated by rapid thermal annealing (RTA). The RTA influence on the chemical state, surface morphology, energy band alignment, and electrical properties of Sn-doped Ga2O3 films were thoroughly investigated. The results of X-ray photoelectron spectroscopy (XPS) demonstrated that Sn atoms were successfully doped into these films. Moreover, energy band alignments were obtained by the energy-loss peak of the O 1s spectrum and valence band spectra and thoroughly discussed. X-ray reflectivity (XRR) and atomic force microscope (AFM) measurements indicated that the Sn-doping level affects the interfacial microstructure and surface morphology. As the Sn content increases, the film thickness decreases while the roughness increases. Finally, the leakage current-voltage (I-V) characteristics proved that the Sn-doped Ga2O3 films have a large breakdown field. In I-V tests, all metal oxide semiconductor (MOS) capacitors exhibited a hard breakdown. This research demonstrates a method for manufacturing high-performance optoelectronic devices with desired properties.
AB - In this work, Sn-doped Ga2O3 films fabricated using plasma-enhanced atomic layer deposition were treated by rapid thermal annealing (RTA). The RTA influence on the chemical state, surface morphology, energy band alignment, and electrical properties of Sn-doped Ga2O3 films were thoroughly investigated. The results of X-ray photoelectron spectroscopy (XPS) demonstrated that Sn atoms were successfully doped into these films. Moreover, energy band alignments were obtained by the energy-loss peak of the O 1s spectrum and valence band spectra and thoroughly discussed. X-ray reflectivity (XRR) and atomic force microscope (AFM) measurements indicated that the Sn-doping level affects the interfacial microstructure and surface morphology. As the Sn content increases, the film thickness decreases while the roughness increases. Finally, the leakage current-voltage (I-V) characteristics proved that the Sn-doped Ga2O3 films have a large breakdown field. In I-V tests, all metal oxide semiconductor (MOS) capacitors exhibited a hard breakdown. This research demonstrates a method for manufacturing high-performance optoelectronic devices with desired properties.
KW - annealing effect
KW - electrical properties
KW - energy band alignment
KW - plasma-enhanced atomic layer deposition
KW - Sn-doped GaO film
UR - http://www.scopus.com/inward/record.url?scp=85149209160&partnerID=8YFLogxK
U2 - 10.3390/cryst13020301
DO - 10.3390/cryst13020301
M3 - Article
AN - SCOPUS:85149209160
SN - 2073-4352
VL - 13
JO - Crystals
JF - Crystals
IS - 2
M1 - 301
ER -