TY - JOUR
T1 - Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN
AU - Xu, Yue
AU - Yang, Xuelin
AU - Zhang, Peng
AU - Cao, Xingzhong
AU - Chen, Yao
AU - Guo, Shiping
AU - Wu, Shan
AU - Zhang, Jie
AU - Feng, Yuxia
AU - Xu, Fujun
AU - Wang, Xinqiang
AU - Ge, Weikun
AU - Shen, Bo
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019/6/1
Y1 - 2019/6/1
N2 - We demonstrate that different doping approaches can significantly influence the lattice locations of carbon (C) in GaN grown by MOCVD. For intrinsically doped GaN with TMGa as the C source, an annealing induced switching process of C atoms from Ga sites to N sites is observed, revealing the existence of substitutional C atoms on both Ga and N sites. While for extrinsically doped GaN with propane as the C precursor, C atoms incorporate almost on N sites. From the viewpoint of growth dynamics, we propose a mechanism for C incorporation into different lattice locations.
AB - We demonstrate that different doping approaches can significantly influence the lattice locations of carbon (C) in GaN grown by MOCVD. For intrinsically doped GaN with TMGa as the C source, an annealing induced switching process of C atoms from Ga sites to N sites is observed, revealing the existence of substitutional C atoms on both Ga and N sites. While for extrinsically doped GaN with propane as the C precursor, C atoms incorporate almost on N sites. From the viewpoint of growth dynamics, we propose a mechanism for C incorporation into different lattice locations.
UR - http://www.scopus.com/inward/record.url?scp=85069537830&partnerID=8YFLogxK
U2 - 10.7567/1882-0786/ab1c19
DO - 10.7567/1882-0786/ab1c19
M3 - Article
AN - SCOPUS:85069537830
SN - 1882-0778
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
IS - 6
M1 - 061002
ER -