Xu, Y., Yang, X., Zhang, P., Cao, X., Chen, Y., Guo, S., Wu, S., Zhang, J., Feng, Y., Xu, F., Wang, X., Ge, W., & Shen, B. (2019). Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN. Applied Physics Express, 12(6), Article 061002. https://doi.org/10.7567/1882-0786/ab1c19
Xu, Yue ; Yang, Xuelin ; Zhang, Peng et al. / Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN. In: Applied Physics Express. 2019 ; Vol. 12, No. 6.
@article{e2d07c79f5074f088d937046ecfa0f60,
title = "Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN",
abstract = "We demonstrate that different doping approaches can significantly influence the lattice locations of carbon (C) in GaN grown by MOCVD. For intrinsically doped GaN with TMGa as the C source, an annealing induced switching process of C atoms from Ga sites to N sites is observed, revealing the existence of substitutional C atoms on both Ga and N sites. While for extrinsically doped GaN with propane as the C precursor, C atoms incorporate almost on N sites. From the viewpoint of growth dynamics, we propose a mechanism for C incorporation into different lattice locations.",
author = "Yue Xu and Xuelin Yang and Peng Zhang and Xingzhong Cao and Yao Chen and Shiping Guo and Shan Wu and Jie Zhang and Yuxia Feng and Fujun Xu and Xinqiang Wang and Weikun Ge and Bo Shen",
note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.",
year = "2019",
month = jun,
day = "1",
doi = "10.7567/1882-0786/ab1c19",
language = "English",
volume = "12",
journal = "Applied Physics Express",
issn = "1882-0778",
number = "6",
}
Xu, Y, Yang, X, Zhang, P, Cao, X, Chen, Y, Guo, S, Wu, S, Zhang, J, Feng, Y, Xu, F, Wang, X, Ge, W & Shen, B 2019, 'Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN', Applied Physics Express, vol. 12, no. 6, 061002. https://doi.org/10.7567/1882-0786/ab1c19
Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN. / Xu, Yue; Yang, Xuelin; Zhang, Peng et al.
In:
Applied Physics Express, Vol. 12, No. 6, 061002, 01.06.2019.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN
AU - Xu, Yue
AU - Yang, Xuelin
AU - Zhang, Peng
AU - Cao, Xingzhong
AU - Chen, Yao
AU - Guo, Shiping
AU - Wu, Shan
AU - Zhang, Jie
AU - Feng, Yuxia
AU - Xu, Fujun
AU - Wang, Xinqiang
AU - Ge, Weikun
AU - Shen, Bo
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019/6/1
Y1 - 2019/6/1
N2 - We demonstrate that different doping approaches can significantly influence the lattice locations of carbon (C) in GaN grown by MOCVD. For intrinsically doped GaN with TMGa as the C source, an annealing induced switching process of C atoms from Ga sites to N sites is observed, revealing the existence of substitutional C atoms on both Ga and N sites. While for extrinsically doped GaN with propane as the C precursor, C atoms incorporate almost on N sites. From the viewpoint of growth dynamics, we propose a mechanism for C incorporation into different lattice locations.
AB - We demonstrate that different doping approaches can significantly influence the lattice locations of carbon (C) in GaN grown by MOCVD. For intrinsically doped GaN with TMGa as the C source, an annealing induced switching process of C atoms from Ga sites to N sites is observed, revealing the existence of substitutional C atoms on both Ga and N sites. While for extrinsically doped GaN with propane as the C precursor, C atoms incorporate almost on N sites. From the viewpoint of growth dynamics, we propose a mechanism for C incorporation into different lattice locations.
UR - http://www.scopus.com/inward/record.url?scp=85069537830&partnerID=8YFLogxK
U2 - 10.7567/1882-0786/ab1c19
DO - 10.7567/1882-0786/ab1c19
M3 - Article
AN - SCOPUS:85069537830
SN - 1882-0778
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
IS - 6
M1 - 061002
ER -
Xu Y, Yang X, Zhang P, Cao X, Chen Y, Guo S et al. Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN. Applied Physics Express. 2019 Jun 1;12(6):061002. doi: 10.7567/1882-0786/ab1c19
