Guo, L., Yang, X., Hu, A., Feng, Z., Lv, Y., Zhang, J., Cheng, J., Tang, N., Wang, X., Ge, W., & Shen, B. (2016). Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier. Scientific Reports, 6, Article 37415. https://doi.org/10.1038/srep37415
Guo, Lei ; Yang, Xuelin ; Hu, Anqi et al. / Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier. In: Scientific Reports. 2016 ; Vol. 6.
@article{d14ee92eb3c541e8a357f902fa393b32,
title = "Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier",
abstract = "The high-field transport characteristics of nearly lattice-matched InAlN/GaN heterostructures with different barrier thickness were investigated. It is found that the current in the InAlN/GaN heterostructures with ultrathin barrier shows unsaturated behaviors (or secondary rising) at high voltage, which is different from that of AlGaN/GaN heterostructures. This phenomenon is more obvious if the barrier thickness is thinner and the channel width is narrower. The experimental results demonstrate that it is the increasing carrier density excited from the more defect states by the hot electrons with larger electron saturation velocity that results in the unsaturated current behaviors in InAlN/GaN heterostructures. Our results pave a way for further optimizing InAlN barrier design and improving the reliability of InAlN/GaN HEMTs.",
author = "Lei Guo and Xuelin Yang and Anqi Hu and Zhihong Feng and Yuanjie Lv and Jie Zhang and Jianpeng Cheng and Ning Tang and Xinqiang Wang and Weikun Ge and Bo Shen",
note = "Publisher Copyright: {\textcopyright} The Author(s) 2016.",
year = "2016",
month = nov,
day = "23",
doi = "10.1038/srep37415",
language = "English",
volume = "6",
journal = "Scientific Reports",
issn = "2045-2322",
}
Guo, L, Yang, X, Hu, A, Feng, Z, Lv, Y, Zhang, J, Cheng, J, Tang, N, Wang, X, Ge, W & Shen, B 2016, 'Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier', Scientific Reports, vol. 6, 37415. https://doi.org/10.1038/srep37415
Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier. / Guo, Lei; Yang, Xuelin; Hu, Anqi et al.
In:
Scientific Reports, Vol. 6, 37415, 23.11.2016.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier
AU - Guo, Lei
AU - Yang, Xuelin
AU - Hu, Anqi
AU - Feng, Zhihong
AU - Lv, Yuanjie
AU - Zhang, Jie
AU - Cheng, Jianpeng
AU - Tang, Ning
AU - Wang, Xinqiang
AU - Ge, Weikun
AU - Shen, Bo
N1 - Publisher Copyright:
© The Author(s) 2016.
PY - 2016/11/23
Y1 - 2016/11/23
N2 - The high-field transport characteristics of nearly lattice-matched InAlN/GaN heterostructures with different barrier thickness were investigated. It is found that the current in the InAlN/GaN heterostructures with ultrathin barrier shows unsaturated behaviors (or secondary rising) at high voltage, which is different from that of AlGaN/GaN heterostructures. This phenomenon is more obvious if the barrier thickness is thinner and the channel width is narrower. The experimental results demonstrate that it is the increasing carrier density excited from the more defect states by the hot electrons with larger electron saturation velocity that results in the unsaturated current behaviors in InAlN/GaN heterostructures. Our results pave a way for further optimizing InAlN barrier design and improving the reliability of InAlN/GaN HEMTs.
AB - The high-field transport characteristics of nearly lattice-matched InAlN/GaN heterostructures with different barrier thickness were investigated. It is found that the current in the InAlN/GaN heterostructures with ultrathin barrier shows unsaturated behaviors (or secondary rising) at high voltage, which is different from that of AlGaN/GaN heterostructures. This phenomenon is more obvious if the barrier thickness is thinner and the channel width is narrower. The experimental results demonstrate that it is the increasing carrier density excited from the more defect states by the hot electrons with larger electron saturation velocity that results in the unsaturated current behaviors in InAlN/GaN heterostructures. Our results pave a way for further optimizing InAlN barrier design and improving the reliability of InAlN/GaN HEMTs.
UR - http://www.scopus.com/inward/record.url?scp=84996848159&partnerID=8YFLogxK
U2 - 10.1038/srep37415
DO - 10.1038/srep37415
M3 - Article
AN - SCOPUS:84996848159
SN - 2045-2322
VL - 6
JO - Scientific Reports
JF - Scientific Reports
M1 - 37415
ER -
Guo L, Yang X, Hu A, Feng Z, Lv Y, Zhang J et al. Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier. Scientific Reports. 2016 Nov 23;6:37415. doi: 10.1038/srep37415