Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier

Lei Guo, Xuelin Yang*, Anqi Hu, Zhihong Feng, Yuanjie Lv, Jie Zhang, Jianpeng Cheng, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The high-field transport characteristics of nearly lattice-matched InAlN/GaN heterostructures with different barrier thickness were investigated. It is found that the current in the InAlN/GaN heterostructures with ultrathin barrier shows unsaturated behaviors (or secondary rising) at high voltage, which is different from that of AlGaN/GaN heterostructures. This phenomenon is more obvious if the barrier thickness is thinner and the channel width is narrower. The experimental results demonstrate that it is the increasing carrier density excited from the more defect states by the hot electrons with larger electron saturation velocity that results in the unsaturated current behaviors in InAlN/GaN heterostructures. Our results pave a way for further optimizing InAlN barrier design and improving the reliability of InAlN/GaN HEMTs.

Original languageEnglish
Article number37415
JournalScientific Reports
Volume6
DOIs
Publication statusPublished - 23 Nov 2016
Externally publishedYes

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