Hot electron assisted vertical leakage/breakdown in AlGaN/GaN heterostructures on Si substrates

Anqi Hu, Xuelin Yang*, Jianpeng Cheng, Lei Guo, Jie Zhang, Yuxia Feng, Panfeng Ji, Ning Tang, Weikun Ge, Xinqiang Wang, Bo Shen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We present a hot electron assisted vertical leakage/breakdown mechanism in AlGaN/GaN heterostructures on Si substrates by a combination of applying vertical and lateral bias conditions. Beyond a critical bias point, the vertical leakage current under the combined bias condition is larger than that under a pure vertical bias condition which results in a lower breakdown voltage. The critical bias has a positive temperature dependence. A model is proposed that highly energetic hot electrons can release trapped electrons from defects and even ionize them. The model is proved by investigating the detrapping and ionization mechanisms by changing hot electron energy.

Original languageEnglish
Pages (from-to)240-245
Number of pages6
JournalSuperlattices and Microstructures
Volume107
DOIs
Publication statusPublished - 1 Jul 2017
Externally publishedYes

Keywords

  • AlGaN/GaN heterostructures on Si
  • Breakdown
  • Hot electron
  • Vertical leakage

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