High transmittance Er-doped ZnO thin films as electrodes for organic light-emitting diodes

Ying Li Shi; Yun Hu; Shuang Peng Wang; Liang Sheng Liao; Francis Chi Chung Ling

doi:10.1063/1.5129065

High transmittance Er-doped ZnO thin films as electrodes for organic light-emitting diodes

Ying Li Shi^*, Yun Hu, Shuang Peng Wang, Liang Sheng Liao, Francis Chi Chung Ling

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Rare earth element-Erbium (Er) doped ZnO (ErZO) thin films were deposited on glass substrates by pulsed laser deposition (PLD). The effect of the Er doping concentration on photoelectric properties of ErZO thin films was investigated in the range of 0-2.0 wt. %. The Er doping resulted in the improvement of n-type conductivity as compared with intrinsic ZnO thin films. The optimized ErZO thin films present the low resistivity of 3.4 × 10^-4 ω/cm, high carrier concentration of 5.9 × 10²⁰/cm³, and high visible optical transmittance (∼93%) when the Er content is 1.0 wt. %. The ErZO thin films were used as transparent anodes to fabricate organic light-emitting diodes (OLEDs). Impressively, with ErZO as the anode, the current efficiency of the OLED device can reach as high as 86.5 cd/A, which was increased by 14% when compared with the reference OLED device (76.0 cd/A) using indium tin oxide as the anode.

Original language	English
Article number	252102
Journal	Applied Physics Letters
Volume	115
Issue number	25
DOIs	https://doi.org/10.1063/1.5129065
Publication status	Published - 16 Dec 2019
Externally published	Yes

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title = "High transmittance Er-doped ZnO thin films as electrodes for organic light-emitting diodes",

abstract = "Rare earth element-Erbium (Er) doped ZnO (ErZO) thin films were deposited on glass substrates by pulsed laser deposition (PLD). The effect of the Er doping concentration on photoelectric properties of ErZO thin films was investigated in the range of 0-2.0 wt. %. The Er doping resulted in the improvement of n-type conductivity as compared with intrinsic ZnO thin films. The optimized ErZO thin films present the low resistivity of 3.4 × 10-4 ω/cm, high carrier concentration of 5.9 × 1020/cm3, and high visible optical transmittance (∼93%) when the Er content is 1.0 wt. %. The ErZO thin films were used as transparent anodes to fabricate organic light-emitting diodes (OLEDs). Impressively, with ErZO as the anode, the current efficiency of the OLED device can reach as high as 86.5 cd/A, which was increased by 14% when compared with the reference OLED device (76.0 cd/A) using indium tin oxide as the anode.",

author = "Shi, {Ying Li} and Yun Hu and Wang, {Shuang Peng} and Liao, {Liang Sheng} and Ling, {Francis Chi Chung}",

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doi = "10.1063/1.5129065",

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volume = "115",

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T1 - High transmittance Er-doped ZnO thin films as electrodes for organic light-emitting diodes

AU - Shi, Ying Li

AU - Hu, Yun

AU - Wang, Shuang Peng

AU - Liao, Liang Sheng

AU - Ling, Francis Chi Chung

PY - 2019/12/16

Y1 - 2019/12/16

N2 - Rare earth element-Erbium (Er) doped ZnO (ErZO) thin films were deposited on glass substrates by pulsed laser deposition (PLD). The effect of the Er doping concentration on photoelectric properties of ErZO thin films was investigated in the range of 0-2.0 wt. %. The Er doping resulted in the improvement of n-type conductivity as compared with intrinsic ZnO thin films. The optimized ErZO thin films present the low resistivity of 3.4 × 10-4 ω/cm, high carrier concentration of 5.9 × 1020/cm3, and high visible optical transmittance (∼93%) when the Er content is 1.0 wt. %. The ErZO thin films were used as transparent anodes to fabricate organic light-emitting diodes (OLEDs). Impressively, with ErZO as the anode, the current efficiency of the OLED device can reach as high as 86.5 cd/A, which was increased by 14% when compared with the reference OLED device (76.0 cd/A) using indium tin oxide as the anode.

AB - Rare earth element-Erbium (Er) doped ZnO (ErZO) thin films were deposited on glass substrates by pulsed laser deposition (PLD). The effect of the Er doping concentration on photoelectric properties of ErZO thin films was investigated in the range of 0-2.0 wt. %. The Er doping resulted in the improvement of n-type conductivity as compared with intrinsic ZnO thin films. The optimized ErZO thin films present the low resistivity of 3.4 × 10-4 ω/cm, high carrier concentration of 5.9 × 1020/cm3, and high visible optical transmittance (∼93%) when the Er content is 1.0 wt. %. The ErZO thin films were used as transparent anodes to fabricate organic light-emitting diodes (OLEDs). Impressively, with ErZO as the anode, the current efficiency of the OLED device can reach as high as 86.5 cd/A, which was increased by 14% when compared with the reference OLED device (76.0 cd/A) using indium tin oxide as the anode.

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VL - 115

JO - Applied Physics Letters

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ER -

High transmittance Er-doped ZnO thin films as electrodes for organic light-emitting diodes

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