High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH3 pulse flow cleaning process

Panfeng Ji; Xuelin Yang; Yuxia Feng; Jianpeng Cheng; Jie Zhang; Anqi Hu; Chunyan Song; Shan Wu; Jianfei Shen; Jun Tang; Chun Tao; Yaobo Pan; Xinqiang Wang; Bo Shen

doi:10.1016/j.spmi.2017.02.019

High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH₃ pulse flow cleaning process

Panfeng Ji, Xuelin Yang, Yuxia Feng, Jianpeng Cheng, Jie Zhang, Anqi Hu, Chunyan Song, Shan Wu, Jianfei Shen, Jun Tang, Chun Tao, Yaobo Pan, Xinqiang Wang, Bo Shen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

By using in-situ NH₃ pulse flow cleaning method, we have achieved the repeated growth of high quality and uniformity GaN and AlGaN/GaN high electron mobility transistors (HEMTs) on 150 mm Si substrate. The two dimensional electron gas (2DEG) mobility is 2200 cm²/Vs with an electron density of 7.3 × 10¹² cm⁻². The sheet resistance is 305 ± 4 Ω/□ with ±1.3% variation. The achievement is attributed to the fact that this method can significantly remove the Al, Ga, etc. metal droplets coating on the post growth flow flange and reactor wall which are difficult to clean by normal bake process under H₂ ambient.

Original language	English
Pages (from-to)	112-117
Number of pages	6
Journal	Superlattices and Microstructures
Volume	104
DOIs	https://doi.org/10.1016/j.spmi.2017.02.019
Publication status	Published - 1 Apr 2017
Externally published	Yes

Keywords

GaN
High quality
NH pulse flow cleaning
Si
Uniformity

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10.1016/j.spmi.2017.02.019

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title = "High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH3 pulse flow cleaning process",

abstract = "By using in-situ NH3 pulse flow cleaning method, we have achieved the repeated growth of high quality and uniformity GaN and AlGaN/GaN high electron mobility transistors (HEMTs) on 150 mm Si substrate. The two dimensional electron gas (2DEG) mobility is 2200 cm2/Vs with an electron density of 7.3 × 1012 cm−2. The sheet resistance is 305 ± 4 Ω/□ with ±1.3% variation. The achievement is attributed to the fact that this method can significantly remove the Al, Ga, etc. metal droplets coating on the post growth flow flange and reactor wall which are difficult to clean by normal bake process under H2 ambient.",

keywords = "GaN, High quality, NH pulse flow cleaning, Si, Uniformity",

author = "Panfeng Ji and Xuelin Yang and Yuxia Feng and Jianpeng Cheng and Jie Zhang and Anqi Hu and Chunyan Song and Shan Wu and Jianfei Shen and Jun Tang and Chun Tao and Yaobo Pan and Xinqiang Wang and Bo Shen",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2017",

month = apr,

day = "1",

doi = "10.1016/j.spmi.2017.02.019",

language = "English",

volume = "104",

pages = "112--117",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

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TY - JOUR

T1 - High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH3 pulse flow cleaning process

AU - Ji, Panfeng

AU - Yang, Xuelin

AU - Feng, Yuxia

AU - Cheng, Jianpeng

AU - Zhang, Jie

AU - Hu, Anqi

AU - Song, Chunyan

AU - Wu, Shan

AU - Shen, Jianfei

AU - Tang, Jun

AU - Tao, Chun

AU - Pan, Yaobo

AU - Wang, Xinqiang

AU - Shen, Bo

PY - 2017/4/1

Y1 - 2017/4/1

N2 - By using in-situ NH3 pulse flow cleaning method, we have achieved the repeated growth of high quality and uniformity GaN and AlGaN/GaN high electron mobility transistors (HEMTs) on 150 mm Si substrate. The two dimensional electron gas (2DEG) mobility is 2200 cm2/Vs with an electron density of 7.3 × 1012 cm−2. The sheet resistance is 305 ± 4 Ω/□ with ±1.3% variation. The achievement is attributed to the fact that this method can significantly remove the Al, Ga, etc. metal droplets coating on the post growth flow flange and reactor wall which are difficult to clean by normal bake process under H2 ambient.

AB - By using in-situ NH3 pulse flow cleaning method, we have achieved the repeated growth of high quality and uniformity GaN and AlGaN/GaN high electron mobility transistors (HEMTs) on 150 mm Si substrate. The two dimensional electron gas (2DEG) mobility is 2200 cm2/Vs with an electron density of 7.3 × 1012 cm−2. The sheet resistance is 305 ± 4 Ω/□ with ±1.3% variation. The achievement is attributed to the fact that this method can significantly remove the Al, Ga, etc. metal droplets coating on the post growth flow flange and reactor wall which are difficult to clean by normal bake process under H2 ambient.

KW - GaN

KW - High quality

KW - NH pulse flow cleaning

KW - Si

KW - Uniformity

UR - http://www.scopus.com/inward/record.url?scp=85013187924&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2017.02.019

DO - 10.1016/j.spmi.2017.02.019

M3 - Article

AN - SCOPUS:85013187924

SN - 0749-6036

VL - 104

SP - 112

EP - 117

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH₃ pulse flow cleaning process

Abstract

Keywords

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