High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer

Yue Li; Ruiyuan Yin; Ming Tao; Yilong Hao; Cheng P. Wen; Maojun Wang; Jie Zhang; Xuelin Yang; Bo Shen

doi:10.1109/ICICDT.2019.8790866

High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer

Yue Li, Ruiyuan Yin, Ming Tao, Yilong Hao, Cheng P. Wen, Maojun Wang, Jie Zhang, Xuelin Yang, Bo Shen

Peking University

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

2 Citations (Scopus)

Abstract

In this letter, based on a new growth strategy, we demonstrate a high-performance quasi-vertical GaN Schottky barrier diode (SBD) fabricated on the hetero-epitaxial layer on silicon, with the highest current on/off ratio of 10¹⁰, the lowest specific on-resistance of 0.95 mΩ·cm², and the lowest ideality factor of 1.23 among the GaN quasi-vertical GaN SBD reported until now. It reveals the great potential of the GaN vertical structure device on Si thanks to the novel growth strategy, which is capable of realizing low density of threading dislocation and thick epitaxial layer at the same time.

Original language	English
Title of host publication	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728118536
DOIs	https://doi.org/10.1109/ICICDT.2019.8790866
Publication status	Published - Jun 2019
Externally published	Yes
Event	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Suzhou, China Duration: 17 Jun 2019 → 19 Jun 2019

Publication series

Name	17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

Conference

Conference	17th IEEE International Conference on IC Design and Technology, ICICDT 2019
Country/Territory	China
City	Suzhou
Period	17/06/19 → 19/06/19

Keywords

GaN
Schottky barrier diode
vertical structure

Access to Document

10.1109/ICICDT.2019.8790866

Cite this

Li, Y., Yin, R., Tao, M., Hao, Y., Wen, C. P., Wang, M., Zhang, J., Yang, X., & Shen, B. (2019). High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings Article 8790866 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2019.8790866

Li, Yue ; Yin, Ruiyuan ; Tao, Ming et al. / High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer. 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

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title = "High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer",

abstract = "In this letter, based on a new growth strategy, we demonstrate a high-performance quasi-vertical GaN Schottky barrier diode (SBD) fabricated on the hetero-epitaxial layer on silicon, with the highest current on/off ratio of 1010, the lowest specific on-resistance of 0.95 mΩ·cm2, and the lowest ideality factor of 1.23 among the GaN quasi-vertical GaN SBD reported until now. It reveals the great potential of the GaN vertical structure device on Si thanks to the novel growth strategy, which is capable of realizing low density of threading dislocation and thick epitaxial layer at the same time.",

keywords = "GaN, Schottky barrier diode, vertical structure",

author = "Yue Li and Ruiyuan Yin and Ming Tao and Yilong Hao and Wen, {Cheng P.} and Maojun Wang and Jie Zhang and Xuelin Yang and Bo Shen",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 ; Conference date: 17-06-2019 Through 19-06-2019",

year = "2019",

month = jun,

doi = "10.1109/ICICDT.2019.8790866",

language = "English",

series = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings",

}

Li, Y, Yin, R, Tao, M, Hao, Y, Wen, CP, Wang, M, Zhang, J, Yang, X & Shen, B 2019, High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer. in 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings., 8790866, 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 17th IEEE International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, 17/06/19. https://doi.org/10.1109/ICICDT.2019.8790866

High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer. / Li, Yue; Yin, Ruiyuan; Tao, Ming et al.
17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8790866 (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

TY - GEN

T1 - High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer

AU - Li, Yue

AU - Yin, Ruiyuan

AU - Tao, Ming

AU - Hao, Yilong

AU - Wen, Cheng P.

AU - Wang, Maojun

AU - Zhang, Jie

AU - Yang, Xuelin

AU - Shen, Bo

PY - 2019/6

Y1 - 2019/6

N2 - In this letter, based on a new growth strategy, we demonstrate a high-performance quasi-vertical GaN Schottky barrier diode (SBD) fabricated on the hetero-epitaxial layer on silicon, with the highest current on/off ratio of 1010, the lowest specific on-resistance of 0.95 mΩ·cm2, and the lowest ideality factor of 1.23 among the GaN quasi-vertical GaN SBD reported until now. It reveals the great potential of the GaN vertical structure device on Si thanks to the novel growth strategy, which is capable of realizing low density of threading dislocation and thick epitaxial layer at the same time.

AB - In this letter, based on a new growth strategy, we demonstrate a high-performance quasi-vertical GaN Schottky barrier diode (SBD) fabricated on the hetero-epitaxial layer on silicon, with the highest current on/off ratio of 1010, the lowest specific on-resistance of 0.95 mΩ·cm2, and the lowest ideality factor of 1.23 among the GaN quasi-vertical GaN SBD reported until now. It reveals the great potential of the GaN vertical structure device on Si thanks to the novel growth strategy, which is capable of realizing low density of threading dislocation and thick epitaxial layer at the same time.

KW - GaN

KW - Schottky barrier diode

KW - vertical structure

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T3 - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

BT - 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Li Y, Yin R, Tao M, Hao Y, Wen CP, Wang M et al. High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer. In 17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8790866. (17th IEEE International Conference on IC Design and Technology, ICICDT 2019 - Proceedings). doi: 10.1109/ICICDT.2019.8790866

High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer

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