Ji, P., Feng, Y., Cheng, J., Zhang, J., Song, C., Yang, X., & Shen, B. (2017). Good repeatability of AlGaN/GaN HEMT on 4″ Si substrate by 5×4″ multi-wafer production MOCVD system. Paper presented at 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017, Indian Wells, United States.
Ji, Panfeng ; Feng, Yuxia ; Cheng, Jianpeng et al. / Good repeatability of AlGaN/GaN HEMT on 4″ Si substrate by 5×4″ multi-wafer production MOCVD system. Paper presented at 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017, Indian Wells, United States.
@conference{2fdd76d08a304d47a1e936d089ee6bd1,
title = "Good repeatability of AlGaN/GaN HEMT on 4″ Si substrate by 5×4″ multi-wafer production MOCVD system",
abstract = "This paper presents crack-free AlGaN/GaN heterostructures grown on 4 inch Si(111) by the production scale 5×4″ (19×2″) multi-wafer Thomas Swan MOCVD system that was once used for GaN-based LEDs and purchased in 2009. The two dimensional electron gas is formed at the AlGaN/GaN interface with average Hall mobility values more than 2100 cm2/v·s and sheet resistance less than 400 Ohm/□. Optimized in-situ baking process was used to insure the RtR repeatability. Run to run repeatability of AlGaN/GaN structural qualities, the trace of in situ optical reflectivity, wafer bow, and 2DEG properties show the potential manufacturing possibility with the epitaxial process stability for MOCVD systems which were once used for LEDs production but no longer cost-effective now. The result is meaningful for LED fabs to utilize the obsoleted MOCVD systems.",
keywords = "AlGaN/GaN, HEMT, MOCVD, Repeatability",
author = "Panfeng Ji and Yuxia Feng and Jianpeng Cheng and Jie Zhang and Chunyan Song and Xuelin Yang and Bo Shen",
year = "2017",
language = "English",
note = "2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 ; Conference date: 22-05-2017 Through 25-05-2017",
}
Ji, P, Feng, Y, Cheng, J, Zhang, J, Song, C, Yang, X & Shen, B 2017, 'Good repeatability of AlGaN/GaN HEMT on 4″ Si substrate by 5×4″ multi-wafer production MOCVD system', Paper presented at 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017, Indian Wells, United States, 22/05/17 - 25/05/17.
Good repeatability of AlGaN/GaN HEMT on 4″ Si substrate by 5×4″ multi-wafer production MOCVD system. / Ji, Panfeng; Feng, Yuxia; Cheng, Jianpeng et al.
2017. Paper presented at 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017, Indian Wells, United States.
Research output: Contribution to conference › Paper › peer-review
TY - CONF
T1 - Good repeatability of AlGaN/GaN HEMT on 4″ Si substrate by 5×4″ multi-wafer production MOCVD system
AU - Ji, Panfeng
AU - Feng, Yuxia
AU - Cheng, Jianpeng
AU - Zhang, Jie
AU - Song, Chunyan
AU - Yang, Xuelin
AU - Shen, Bo
PY - 2017
Y1 - 2017
N2 - This paper presents crack-free AlGaN/GaN heterostructures grown on 4 inch Si(111) by the production scale 5×4″ (19×2″) multi-wafer Thomas Swan MOCVD system that was once used for GaN-based LEDs and purchased in 2009. The two dimensional electron gas is formed at the AlGaN/GaN interface with average Hall mobility values more than 2100 cm2/v·s and sheet resistance less than 400 Ohm/□. Optimized in-situ baking process was used to insure the RtR repeatability. Run to run repeatability of AlGaN/GaN structural qualities, the trace of in situ optical reflectivity, wafer bow, and 2DEG properties show the potential manufacturing possibility with the epitaxial process stability for MOCVD systems which were once used for LEDs production but no longer cost-effective now. The result is meaningful for LED fabs to utilize the obsoleted MOCVD systems.
AB - This paper presents crack-free AlGaN/GaN heterostructures grown on 4 inch Si(111) by the production scale 5×4″ (19×2″) multi-wafer Thomas Swan MOCVD system that was once used for GaN-based LEDs and purchased in 2009. The two dimensional electron gas is formed at the AlGaN/GaN interface with average Hall mobility values more than 2100 cm2/v·s and sheet resistance less than 400 Ohm/□. Optimized in-situ baking process was used to insure the RtR repeatability. Run to run repeatability of AlGaN/GaN structural qualities, the trace of in situ optical reflectivity, wafer bow, and 2DEG properties show the potential manufacturing possibility with the epitaxial process stability for MOCVD systems which were once used for LEDs production but no longer cost-effective now. The result is meaningful for LED fabs to utilize the obsoleted MOCVD systems.
KW - AlGaN/GaN
KW - HEMT
KW - MOCVD
KW - Repeatability
UR - http://www.scopus.com/inward/record.url?scp=85029547840&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:85029547840
T2 - 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017
Y2 - 22 May 2017 through 25 May 2017
ER -
Ji P, Feng Y, Cheng J, Zhang J, Song C, Yang X et al.. Good repeatability of AlGaN/GaN HEMT on 4″ Si substrate by 5×4″ multi-wafer production MOCVD system. 2017. Paper presented at 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017, Indian Wells, United States.