Good repeatability of AlGaN/GaN HEMT on 4″ Si substrate by 5×4″ multi-wafer production MOCVD system

This paper presents crack-free AlGaN/GaN heterostructures grown on 4 inch Si(111) by the production scale 5×4″ (19×2″) multi-wafer Thomas Swan MOCVD system that was once used for GaN-based LEDs and purchased in 2009. The two dimensional electron gas is formed at the AlGaN/GaN interface with average Hall mobility values more than 2100 cm²/v·s and sheet resistance less than 400 Ohm/□. Optimized in-situ baking process was used to insure the RtR repeatability. Run to run repeatability of AlGaN/GaN structural qualities, the trace of in situ optical reflectivity, wafer bow, and 2DEG properties show the potential manufacturing possibility with the epitaxial process stability for MOCVD systems which were once used for LEDs production but no longer cost-effective now. The result is meaningful for LED fabs to utilize the obsoleted MOCVD systems.