Germanium tin tunneling field-effect transistor for sub-0.4 v operation

Yue Yang; Kain Lu Low; Pengfei Guo; Wang Wei; Genquan Han; Yee Chia Yeo.

doi:10.1149/05009.0979ecst

Germanium tin tunneling field-effect transistor for sub-0.4 v operation

Yue Yang, Kain Lu Low, Pengfei Guo, Wang Wei, Genquan Han, Yee Chia Yeo.

National University of Singapore

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

Germanium Tin (Ge_1-xSn_x) as a group IV material has a direct and small band-gap for x > 0.11, which is attractive for the application in tunneling field-effect transistor (TFET). In this work, the design of Ge_1-xSn_x TFET operating at low supply voltages is investigated by simulation. Device simulation results show that Ge _1-xSn_x-based TFET can achieve high tunneling current and has potential for logic applications using sub-0.4 V supply voltage.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	979-986
Number of pages	8
Edition	9
ISBN (Print)	9781607683575
DOIs	https://doi.org/10.1149/05009.0979ecst
Publication status	Published - 2013
Externally published	Yes
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: 7 Oct 2012 → 12 Oct 2012

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	7/10/12 → 12/10/12

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10.1149/05009.0979ecst

Cite this

@inproceedings{3456eb1a6659461d8324a8259f86bb6d,

title = "Germanium tin tunneling field-effect transistor for sub-0.4 v operation",

abstract = "Germanium Tin (Ge1-xSnx) as a group IV material has a direct and small band-gap for x > 0.11, which is attractive for the application in tunneling field-effect transistor (TFET). In this work, the design of Ge1-xSnx TFET operating at low supply voltages is investigated by simulation. Device simulation results show that Ge 1-xSnx-based TFET can achieve high tunneling current and has potential for logic applications using sub-0.4 V supply voltage.",

author = "Yue Yang and Low, {Kain Lu} and Pengfei Guo and Wang Wei and Genquan Han and Yeo., {Yee Chia}",

year = "2013",

doi = "10.1149/05009.0979ecst",

language = "English",

isbn = "9781607683575",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "9",

pages = "979--986",

booktitle = "SiGe, Ge, and Related Compounds 5",

edition = "9",

note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",

}

Yang, Y, Low, KL, Guo, P, Wei, W, Han, G & Yeo., YC 2013, Germanium tin tunneling field-effect transistor for sub-0.4 v operation. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, Electrochemical Society Inc., pp. 979-986, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 7/10/12. https://doi.org/10.1149/05009.0979ecst

Germanium tin tunneling field-effect transistor for sub-0.4 v operation. / Yang, Yue; Low, Kain Lu; Guo, Pengfei et al.
SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. Electrochemical Society Inc., 2013. p. 979-986 (ECS Transactions; Vol. 50, No. 9).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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T1 - Germanium tin tunneling field-effect transistor for sub-0.4 v operation

AU - Yang, Yue

AU - Low, Kain Lu

AU - Guo, Pengfei

AU - Wei, Wang

AU - Han, Genquan

AU - Yeo., Yee Chia

PY - 2013

Y1 - 2013

N2 - Germanium Tin (Ge1-xSnx) as a group IV material has a direct and small band-gap for x > 0.11, which is attractive for the application in tunneling field-effect transistor (TFET). In this work, the design of Ge1-xSnx TFET operating at low supply voltages is investigated by simulation. Device simulation results show that Ge 1-xSnx-based TFET can achieve high tunneling current and has potential for logic applications using sub-0.4 V supply voltage.

AB - Germanium Tin (Ge1-xSnx) as a group IV material has a direct and small band-gap for x > 0.11, which is attractive for the application in tunneling field-effect transistor (TFET). In this work, the design of Ge1-xSnx TFET operating at low supply voltages is investigated by simulation. Device simulation results show that Ge 1-xSnx-based TFET can achieve high tunneling current and has potential for logic applications using sub-0.4 V supply voltage.

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U2 - 10.1149/05009.0979ecst

DO - 10.1149/05009.0979ecst

M3 - Conference Proceeding

AN - SCOPUS:84885712363

SN - 9781607683575

T3 - ECS Transactions

SP - 979

EP - 986

BT - SiGe, Ge, and Related Compounds 5

PB - Electrochemical Society Inc.

T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting

Y2 - 7 October 2012 through 12 October 2012

ER -

Germanium tin tunneling field-effect transistor for sub-0.4 v operation

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