TY - JOUR
T1 - GaN-based double-gate (DG) sub-10-nm MOSFETs
T2 - effects of gate work function
AU - Mehedi, Ibrahim Mustafa
AU - Alshareef, Abdulaziz M.
AU - Islam, Md Rafiqul
AU - Hasan, Md Tanvir
N1 - Publisher Copyright:
© 2018, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2018/6/1
Y1 - 2018/6/1
N2 - Double-gate (DG) metal–oxide–semiconductor field-effect transistors (MOSFETs) with GaN channel material are very promising for use in future high-performance low-power nanoscale device applications. In this work, GaN-based sub-10-nm DG-MOSFETs with different gate work function, Φ, were designed and their performance evaluated. Short-channel effects (SCEs) were significantly reduced by introduction of gates made of dual metals. Use of gold at the source side, having higher Φ (ΦAu=5.11eV) compared with aluminum (ΦAl=4.53eV), at the drain side enhanced the gate control over the channel and screened the effect of the drain on the channel. Dual-metal (DM) DG-MOSFETs showed better results in the nanoscale regime and were more robust to SCEs. Therefore, GaN-based sub-10-nm DM DG-MOSFETs are suitable candidates for use in future complementary metal–oxide–semiconductor (CMOS) technology.
AB - Double-gate (DG) metal–oxide–semiconductor field-effect transistors (MOSFETs) with GaN channel material are very promising for use in future high-performance low-power nanoscale device applications. In this work, GaN-based sub-10-nm DG-MOSFETs with different gate work function, Φ, were designed and their performance evaluated. Short-channel effects (SCEs) were significantly reduced by introduction of gates made of dual metals. Use of gold at the source side, having higher Φ (ΦAu=5.11eV) compared with aluminum (ΦAl=4.53eV), at the drain side enhanced the gate control over the channel and screened the effect of the drain on the channel. Dual-metal (DM) DG-MOSFETs showed better results in the nanoscale regime and were more robust to SCEs. Therefore, GaN-based sub-10-nm DM DG-MOSFETs are suitable candidates for use in future complementary metal–oxide–semiconductor (CMOS) technology.
KW - DG-MOSFETs
KW - Dual-metal double gate (DMDG)
KW - GaN
KW - Gate work function
KW - Nanoscale device
KW - Short-channel effects (SCEs)
UR - http://www.scopus.com/inward/record.url?scp=85045059657&partnerID=8YFLogxK
U2 - 10.1007/s10825-017-1119-z
DO - 10.1007/s10825-017-1119-z
M3 - Article
AN - SCOPUS:85045059657
SN - 1569-8025
VL - 17
SP - 663
EP - 669
JO - Journal of Computational Electronics
JF - Journal of Computational Electronics
IS - 2
ER -