First principles studies for electronic structure of β-Ga2O3 and GaAs

Ruoyun Yang, Jie Zhang, Hong Ping Ma*, Qing Chun Zhang

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review

Abstract

Heterojunctions based on the compounding of wide and narrow bandgap materials provide a material basis for the realization of high-performance electronic and optoelectronic devices, but before constructing it, it's necessary to study the electronic structure of the selected materials for theoretical analysis. In this paper, we found out β-Ga2O3 and GaAs are ideal candidates for wide-narrow bandgap recombination. The band structures and density of states of β-Ga2O3 and GaAs were calculated by first principles based on DFT theory for the analysis of electronic structures, and the results are in good agreement with the experimental work. Simulation calculation saves time and cost and can be used as a powerful tool for material analysis and prediction of material properties. These findings will facilitate the analysis and design of electronic and optoelectronic devices based on the combination of β-Ga2O3 and GaAs.

Original languageEnglish
Title of host publicationProceedings - 2022 19th China International Forum on Solid State Lighting and 2022 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA
Subtitle of host publicationIFWS 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages177-180
Number of pages4
ISBN (Electronic)9798350346381
DOIs
Publication statusPublished - 2023
Externally publishedYes
Event19th China International Forum on Solid State Lighting and 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022 - Suzhou, China
Duration: 7 Feb 202310 Feb 2023

Publication series

NameProceedings - 2022 19th China International Forum on Solid State Lighting and 2022 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022

Conference

Conference19th China International Forum on Solid State Lighting and 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022
Country/TerritoryChina
CitySuzhou
Period7/02/2310/02/23

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