TY - GEN
T1 - First principles studies for electronic structure of β-Ga2O3 and GaAs
AU - Yang, Ruoyun
AU - Zhang, Jie
AU - Ma, Hong Ping
AU - Zhang, Qing Chun
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Heterojunctions based on the compounding of wide and narrow bandgap materials provide a material basis for the realization of high-performance electronic and optoelectronic devices, but before constructing it, it's necessary to study the electronic structure of the selected materials for theoretical analysis. In this paper, we found out β-Ga2O3 and GaAs are ideal candidates for wide-narrow bandgap recombination. The band structures and density of states of β-Ga2O3 and GaAs were calculated by first principles based on DFT theory for the analysis of electronic structures, and the results are in good agreement with the experimental work. Simulation calculation saves time and cost and can be used as a powerful tool for material analysis and prediction of material properties. These findings will facilitate the analysis and design of electronic and optoelectronic devices based on the combination of β-Ga2O3 and GaAs.
AB - Heterojunctions based on the compounding of wide and narrow bandgap materials provide a material basis for the realization of high-performance electronic and optoelectronic devices, but before constructing it, it's necessary to study the electronic structure of the selected materials for theoretical analysis. In this paper, we found out β-Ga2O3 and GaAs are ideal candidates for wide-narrow bandgap recombination. The band structures and density of states of β-Ga2O3 and GaAs were calculated by first principles based on DFT theory for the analysis of electronic structures, and the results are in good agreement with the experimental work. Simulation calculation saves time and cost and can be used as a powerful tool for material analysis and prediction of material properties. These findings will facilitate the analysis and design of electronic and optoelectronic devices based on the combination of β-Ga2O3 and GaAs.
UR - http://www.scopus.com/inward/record.url?scp=85152192499&partnerID=8YFLogxK
U2 - 10.1109/SSLChinaIFWS57942.2023.10070929
DO - 10.1109/SSLChinaIFWS57942.2023.10070929
M3 - Conference Proceeding
AN - SCOPUS:85152192499
T3 - Proceedings - 2022 19th China International Forum on Solid State Lighting and 2022 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022
SP - 177
EP - 180
BT - Proceedings - 2022 19th China International Forum on Solid State Lighting and 2022 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th China International Forum on Solid State Lighting and 8th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2022
Y2 - 7 February 2023 through 10 February 2023
ER -