Estimation of minority carrier lifetime in InGaN single junction solar cell

Md Zahangir Alom; Md Soyaeb Hasan; Md Rafiqul Islam; Ibrahim Mustafa Mehedi; Abdullah M. Dobaie

doi:10.1109/CEEE.2015.7428271

Estimation of minority carrier lifetime in InGaN single junction solar cell

Md Zahangir Alom, Md Soyaeb Hasan, Md Rafiqul Islam, Ibrahim Mustafa Mehedi, Abdullah M. Dobaie

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

2 Citations (Scopus)

Abstract

The parameters that influence the performance of solar cell, minority carrier lifetime is a crucial one. The increase of minority carrier lifetime results in higher conversion efficiency. Minority carrier lifetime is determined and analyzed for InGaN single junction solar cell at different excess carrier concentrations by considering the effect of radiative, Auger, Shockley-Read-Hall (SRH) and surface recombination. Since InGaN is a direct bandgap material it is found that radiative recombination is the dominating mechanism for determining the minority carrier lifetime.

Original language	English
Title of host publication	ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	257-260
Number of pages	4
ISBN (Electronic)	9781509019397
DOIs	https://doi.org/10.1109/CEEE.2015.7428271
Publication status	Published - 7 Mar 2016
Externally published	Yes
Event	1st International Conference on Electrical and Electronic Engineering, ICEEE 2015 - Rajshahi, Bangladesh Duration: 4 Nov 2015 → 6 Nov 2015

Publication series

Name	ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering

Conference

Conference	1st International Conference on Electrical and Electronic Engineering, ICEEE 2015
Country/Territory	Bangladesh
City	Rajshahi
Period	4/11/15 → 6/11/15

Keywords

excess carrier concentration
InGaN
Minority carrier lifetime
single junction solar cell

Access to Document

10.1109/CEEE.2015.7428271

Cite this

Alom, M. Z., Hasan, M. S., Islam, M. R., Mehedi, I. M., & Dobaie, A. M. (2016). Estimation of minority carrier lifetime in InGaN single junction solar cell. In ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering (pp. 257-260). Article 7428271 (ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CEEE.2015.7428271

Alom, Md Zahangir ; Hasan, Md Soyaeb ; Islam, Md Rafiqul et al. / Estimation of minority carrier lifetime in InGaN single junction solar cell. ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 257-260 (ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering).

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title = "Estimation of minority carrier lifetime in InGaN single junction solar cell",

abstract = "The parameters that influence the performance of solar cell, minority carrier lifetime is a crucial one. The increase of minority carrier lifetime results in higher conversion efficiency. Minority carrier lifetime is determined and analyzed for InGaN single junction solar cell at different excess carrier concentrations by considering the effect of radiative, Auger, Shockley-Read-Hall (SRH) and surface recombination. Since InGaN is a direct bandgap material it is found that radiative recombination is the dominating mechanism for determining the minority carrier lifetime.",

keywords = "excess carrier concentration, InGaN, Minority carrier lifetime, single junction solar cell",

author = "Alom, {Md Zahangir} and Hasan, {Md Soyaeb} and Islam, {Md Rafiqul} and Mehedi, {Ibrahim Mustafa} and Dobaie, {Abdullah M.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 1st International Conference on Electrical and Electronic Engineering, ICEEE 2015 ; Conference date: 04-11-2015 Through 06-11-2015",

year = "2016",

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doi = "10.1109/CEEE.2015.7428271",

language = "English",

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Alom, MZ, Hasan, MS, Islam, MR, Mehedi, IM & Dobaie, AM 2016, Estimation of minority carrier lifetime in InGaN single junction solar cell. in ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering., 7428271, ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering, Institute of Electrical and Electronics Engineers Inc., pp. 257-260, 1st International Conference on Electrical and Electronic Engineering, ICEEE 2015, Rajshahi, Bangladesh, 4/11/15. https://doi.org/10.1109/CEEE.2015.7428271

Estimation of minority carrier lifetime in InGaN single junction solar cell. / Alom, Md Zahangir; Hasan, Md Soyaeb; Islam, Md Rafiqul et al.
ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering. Institute of Electrical and Electronics Engineers Inc., 2016. p. 257-260 7428271 (ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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T1 - Estimation of minority carrier lifetime in InGaN single junction solar cell

AU - Alom, Md Zahangir

AU - Hasan, Md Soyaeb

AU - Islam, Md Rafiqul

AU - Mehedi, Ibrahim Mustafa

AU - Dobaie, Abdullah M.

PY - 2016/3/7

Y1 - 2016/3/7

N2 - The parameters that influence the performance of solar cell, minority carrier lifetime is a crucial one. The increase of minority carrier lifetime results in higher conversion efficiency. Minority carrier lifetime is determined and analyzed for InGaN single junction solar cell at different excess carrier concentrations by considering the effect of radiative, Auger, Shockley-Read-Hall (SRH) and surface recombination. Since InGaN is a direct bandgap material it is found that radiative recombination is the dominating mechanism for determining the minority carrier lifetime.

AB - The parameters that influence the performance of solar cell, minority carrier lifetime is a crucial one. The increase of minority carrier lifetime results in higher conversion efficiency. Minority carrier lifetime is determined and analyzed for InGaN single junction solar cell at different excess carrier concentrations by considering the effect of radiative, Auger, Shockley-Read-Hall (SRH) and surface recombination. Since InGaN is a direct bandgap material it is found that radiative recombination is the dominating mechanism for determining the minority carrier lifetime.

KW - excess carrier concentration

KW - InGaN

KW - Minority carrier lifetime

KW - single junction solar cell

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U2 - 10.1109/CEEE.2015.7428271

DO - 10.1109/CEEE.2015.7428271

M3 - Conference Proceeding

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T3 - ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering

SP - 257

EP - 260

BT - ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1st International Conference on Electrical and Electronic Engineering, ICEEE 2015

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ER -

Alom MZ, Hasan MS, Islam MR, Mehedi IM, Dobaie AM. Estimation of minority carrier lifetime in InGaN single junction solar cell. In ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering. Institute of Electrical and Electronics Engineers Inc. 2016. p. 257-260. 7428271. (ICEEE 2015 - 1st International Conference on Electrical and Electronic Engineering). doi: 10.1109/CEEE.2015.7428271

Estimation of minority carrier lifetime in InGaN single junction solar cell

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