TY - JOUR
T1 - Epitaxy of Single-Crystalline GaN Film on CMOS-Compatible Si(100) Substrate Buffered by Graphene
AU - Feng, Yuxia
AU - Yang, Xuelin
AU - Zhang, Zhihong
AU - Kang, Duan
AU - Zhang, Jie
AU - Liu, Kaihui
AU - Li, Xinzheng
AU - Shen, Jianfei
AU - Liu, Fang
AU - Wang, Tao
AU - Ji, Panfeng
AU - Xu, Fujun
AU - Tang, Ning
AU - Yu, Tongjun
AU - Wang, Xinqiang
AU - Yu, Dapeng
AU - Ge, Weikun
AU - Shen, Bo
N1 - Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/10/1
Y1 - 2019/10/1
N2 - Fabricating single-crystalline gallium nitride (GaN)-based devices on a Si(100) substrate, which is compatible with the mainstream complementary metal-oxide-semiconductor circuits, is a prerequisite for next-generation high-performance electronics and optoelectronics. However, the direct epitaxy of single-crystalline GaN on a Si(100) substrate remains challenging due to the asymmetric surface domains of Si(100), which can lead to polycrystalline GaN with a two-domain structure. Here, by utilizing single-crystalline graphene as a buffer layer, the epitaxy of a single-crystalline GaN film on a Si(100) substrate is demonstrated. The in situ treatment of graphene with NH3 can generate sp3 CN bonds, which then triggers the nucleation of nitrides. The one-atom-thick single-crystalline graphene provides an in-plane driving force to align all GaN domains to form a single crystal. The nucleation mechanisms and domain evolutions are further clarified by surface science exploration and first-principle calculations. This work lays the foundation for the integration of GaN-based devices into Si-based integrated circuits and also broadens the choice for the epitaxy of nitrides on unconventional amorphous or flexible substrates.
AB - Fabricating single-crystalline gallium nitride (GaN)-based devices on a Si(100) substrate, which is compatible with the mainstream complementary metal-oxide-semiconductor circuits, is a prerequisite for next-generation high-performance electronics and optoelectronics. However, the direct epitaxy of single-crystalline GaN on a Si(100) substrate remains challenging due to the asymmetric surface domains of Si(100), which can lead to polycrystalline GaN with a two-domain structure. Here, by utilizing single-crystalline graphene as a buffer layer, the epitaxy of a single-crystalline GaN film on a Si(100) substrate is demonstrated. The in situ treatment of graphene with NH3 can generate sp3 CN bonds, which then triggers the nucleation of nitrides. The one-atom-thick single-crystalline graphene provides an in-plane driving force to align all GaN domains to form a single crystal. The nucleation mechanisms and domain evolutions are further clarified by surface science exploration and first-principle calculations. This work lays the foundation for the integration of GaN-based devices into Si-based integrated circuits and also broadens the choice for the epitaxy of nitrides on unconventional amorphous or flexible substrates.
KW - in-plane orientation
KW - nucleation
KW - Si(100)
KW - single-crystalline GaN films
KW - single-crystalline graphene
UR - http://www.scopus.com/inward/record.url?scp=85069892259&partnerID=8YFLogxK
U2 - 10.1002/adfm.201905056
DO - 10.1002/adfm.201905056
M3 - Article
AN - SCOPUS:85069892259
SN - 1616-301X
VL - 29
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 42
M1 - 1905056
ER -