Electronic band structure and effective masses of Ge1-xSn x alloys

Kain Lu Low; Yue Yang; Genquan Han; Weijun Fan; Yee Chia Yeo

doi:10.1149/05009.0519ecst

Electronic band structure and effective masses of Ge_1-xSn _x alloys

Kain Lu Low, Yue Yang, Genquan Han, Weijun Fan, Yee Chia Yeo^*

^*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

1 Citation (Scopus)

Abstract

The electronic band structures of Ge_1-xSn_x alloys for Sn composition varying from 0 to 20% were investigated using the Empirical Pseudopotential Method (EPM). By tuning the adjustable form factors of EPM, the band features which agree well with the reported experimental data were successfully reproduced. From the calculated band structures of Ge _1-xSn_x alloys along high symmetrical lines in the Brillouin Zone, the effective masses at the band edges were extracted by using a parabolic line fit. The bowing parameters of hole and electron effective masses were derived by fitting the effective mass at different Sn compositions by a quadratic polynomial.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	519-526
Number of pages	8
Edition	9
ISBN (Print)	9781607683575
DOIs	https://doi.org/10.1149/05009.0519ecst
Publication status	Published - 2013
Externally published	Yes
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: 7 Oct 2012 → 12 Oct 2012

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	7/10/12 → 12/10/12

Access to Document

10.1149/05009.0519ecst

Cite this

@inproceedings{574f7622b80c4728bb00d2bedaad5e5e,

title = "Electronic band structure and effective masses of Ge1-xSn x alloys",

abstract = "The electronic band structures of Ge1-xSnx alloys for Sn composition varying from 0 to 20% were investigated using the Empirical Pseudopotential Method (EPM). By tuning the adjustable form factors of EPM, the band features which agree well with the reported experimental data were successfully reproduced. From the calculated band structures of Ge 1-xSnx alloys along high symmetrical lines in the Brillouin Zone, the effective masses at the band edges were extracted by using a parabolic line fit. The bowing parameters of hole and electron effective masses were derived by fitting the effective mass at different Sn compositions by a quadratic polynomial.",

author = "Low, {Kain Lu} and Yue Yang and Genquan Han and Weijun Fan and Yeo, {Yee Chia}",

year = "2013",

doi = "10.1149/05009.0519ecst",

language = "English",

isbn = "9781607683575",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "9",

pages = "519--526",

booktitle = "SiGe, Ge, and Related Compounds 5",

edition = "9",

note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",

}

Low, KL, Yang, Y, Han, G, Fan, W & Yeo, YC 2013, Electronic band structure and effective masses of Ge_1-xSn _x alloys. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, Electrochemical Society Inc., pp. 519-526, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 7/10/12. https://doi.org/10.1149/05009.0519ecst

Electronic band structure and effective masses of Ge_1-xSn _x alloys. / Low, Kain Lu; Yang, Yue; Han, Genquan et al.
SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. Electrochemical Society Inc., 2013. p. 519-526 (ECS Transactions; Vol. 50, No. 9).

Research output: Chapter in Book or Report/Conference proceeding › Conference Proceeding › peer-review

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T1 - Electronic band structure and effective masses of Ge1-xSn x alloys

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AU - Yang, Yue

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AU - Fan, Weijun

AU - Yeo, Yee Chia

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N2 - The electronic band structures of Ge1-xSnx alloys for Sn composition varying from 0 to 20% were investigated using the Empirical Pseudopotential Method (EPM). By tuning the adjustable form factors of EPM, the band features which agree well with the reported experimental data were successfully reproduced. From the calculated band structures of Ge 1-xSnx alloys along high symmetrical lines in the Brillouin Zone, the effective masses at the band edges were extracted by using a parabolic line fit. The bowing parameters of hole and electron effective masses were derived by fitting the effective mass at different Sn compositions by a quadratic polynomial.

AB - The electronic band structures of Ge1-xSnx alloys for Sn composition varying from 0 to 20% were investigated using the Empirical Pseudopotential Method (EPM). By tuning the adjustable form factors of EPM, the band features which agree well with the reported experimental data were successfully reproduced. From the calculated band structures of Ge 1-xSnx alloys along high symmetrical lines in the Brillouin Zone, the effective masses at the band edges were extracted by using a parabolic line fit. The bowing parameters of hole and electron effective masses were derived by fitting the effective mass at different Sn compositions by a quadratic polynomial.

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