Efficient All-Inorganic Perovskite Light-Emitting Diodes with Cesium Tungsten Bronze as a Hole-Transporting Layer

Ying Li Shi; Ming Peng Zhuo; Xiao Chen Fang; Xiao Qing Zhou; Xue Dong Wang; Wei Fan Chen; Liang Sheng Liao

doi:10.1021/acs.jpclett.0c02304

Efficient All-Inorganic Perovskite Light-Emitting Diodes with Cesium Tungsten Bronze as a Hole-Transporting Layer

Ying Li Shi, Ming Peng Zhuo, Xiao Chen Fang, Xiao Qing Zhou, Xue Dong Wang, Wei Fan Chen^*, Liang Sheng Liao^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The realization of high-performance optoelectronic devices requires excellent charge-transporting layers and efficient carrier recombination. Herein, we synthesized cesium tungsten bronze (Cs0.32WO3) nanocrystals and utilized them as the hole-transporting material to fabricate all-inorganic perovskite light-emitting diodes (PeLEDs). Due to the excellent carrier balance characteristics via comparison between the hole-only device and electron-only device, the all-inorganic PeLEDs with CsPbBr3 as the light-emitting layer present the maximum current efficiency of 31.51 cd/A and external quantum efficiency (EQE) of 8.48%, which are self-evidently enhanced compared with the PEDOT:PSS (14.78 cd/A, 4.03%) and WO3 (24.75 cd/A, 6.18%) based devices. Considering the remarkably improved device performance, the proposed HTL of Cs0.32WO3 is promising, acting as a favorable building block for high-efficiency light-emitting devices.

Original language	English
Pages (from-to)	7624-7629
Number of pages	6
Journal	Journal of Physical Chemistry Letters
Volume	11
Issue number	18
DOIs	https://doi.org/10.1021/acs.jpclett.0c02304
Publication status	Published - 17 Sept 2020
Externally published	Yes

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@article{f180b176879c46d88f369a63d46ba201,

title = "Efficient All-Inorganic Perovskite Light-Emitting Diodes with Cesium Tungsten Bronze as a Hole-Transporting Layer",

abstract = "The realization of high-performance optoelectronic devices requires excellent charge-transporting layers and efficient carrier recombination. Herein, we synthesized cesium tungsten bronze (Cs0.32WO3) nanocrystals and utilized them as the hole-transporting material to fabricate all-inorganic perovskite light-emitting diodes (PeLEDs). Due to the excellent carrier balance characteristics via comparison between the hole-only device and electron-only device, the all-inorganic PeLEDs with CsPbBr3 as the light-emitting layer present the maximum current efficiency of 31.51 cd/A and external quantum efficiency (EQE) of 8.48%, which are self-evidently enhanced compared with the PEDOT:PSS (14.78 cd/A, 4.03%) and WO3 (24.75 cd/A, 6.18%) based devices. Considering the remarkably improved device performance, the proposed HTL of Cs0.32WO3 is promising, acting as a favorable building block for high-efficiency light-emitting devices.",

author = "Shi, {Ying Li} and Zhuo, {Ming Peng} and Fang, {Xiao Chen} and Zhou, {Xiao Qing} and Wang, {Xue Dong} and Chen, {Wei Fan} and Liao, {Liang Sheng}",

note = "Publisher Copyright: Copyright {\textcopyright} 2020 American Chemical Society.",

year = "2020",

month = sep,

day = "17",

doi = "10.1021/acs.jpclett.0c02304",

language = "English",

volume = "11",

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journal = "Journal of Physical Chemistry Letters",

issn = "1948-7185",

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T1 - Efficient All-Inorganic Perovskite Light-Emitting Diodes with Cesium Tungsten Bronze as a Hole-Transporting Layer

AU - Shi, Ying Li

AU - Zhuo, Ming Peng

AU - Fang, Xiao Chen

AU - Zhou, Xiao Qing

AU - Wang, Xue Dong

AU - Chen, Wei Fan

AU - Liao, Liang Sheng

PY - 2020/9/17

Y1 - 2020/9/17

N2 - The realization of high-performance optoelectronic devices requires excellent charge-transporting layers and efficient carrier recombination. Herein, we synthesized cesium tungsten bronze (Cs0.32WO3) nanocrystals and utilized them as the hole-transporting material to fabricate all-inorganic perovskite light-emitting diodes (PeLEDs). Due to the excellent carrier balance characteristics via comparison between the hole-only device and electron-only device, the all-inorganic PeLEDs with CsPbBr3 as the light-emitting layer present the maximum current efficiency of 31.51 cd/A and external quantum efficiency (EQE) of 8.48%, which are self-evidently enhanced compared with the PEDOT:PSS (14.78 cd/A, 4.03%) and WO3 (24.75 cd/A, 6.18%) based devices. Considering the remarkably improved device performance, the proposed HTL of Cs0.32WO3 is promising, acting as a favorable building block for high-efficiency light-emitting devices.

AB - The realization of high-performance optoelectronic devices requires excellent charge-transporting layers and efficient carrier recombination. Herein, we synthesized cesium tungsten bronze (Cs0.32WO3) nanocrystals and utilized them as the hole-transporting material to fabricate all-inorganic perovskite light-emitting diodes (PeLEDs). Due to the excellent carrier balance characteristics via comparison between the hole-only device and electron-only device, the all-inorganic PeLEDs with CsPbBr3 as the light-emitting layer present the maximum current efficiency of 31.51 cd/A and external quantum efficiency (EQE) of 8.48%, which are self-evidently enhanced compared with the PEDOT:PSS (14.78 cd/A, 4.03%) and WO3 (24.75 cd/A, 6.18%) based devices. Considering the remarkably improved device performance, the proposed HTL of Cs0.32WO3 is promising, acting as a favorable building block for high-efficiency light-emitting devices.

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DO - 10.1021/acs.jpclett.0c02304

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SN - 1948-7185

VL - 11

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JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

IS - 18

ER -

Efficient All-Inorganic Perovskite Light-Emitting Diodes with Cesium Tungsten Bronze as a Hole-Transporting Layer

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