Dynamic RON Degradation in AlGaN/GaN MIS-HEMTs With Si3N4 or Si3N4/ZrO2Passivation Layer

Ye Liang; Yuanlei Zhang; Xiuyuan He; Yinchao Zhao; Jiudun Yan; Mingxiang Wang; Wen Liu

doi:10.1109/TED.2024.3372933

Dynamic RON Degradation in AlGaN/GaN MIS-HEMTs With Si3N4 or Si3N4/ZrO2Passivation Layer

Ye Liang, Yuanlei Zhang, Xiuyuan He, Yinchao Zhao, Jiudun Yan, Mingxiang Wang, Wen Liu

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The dynamic <inline-formula> <tex-math notation="LaTeX">$\textit{R}_{\biosc{on}}$</tex-math> </inline-formula> degradation in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different passivation layers (Si<inline-formula> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula>N<inline-formula> <tex-math notation="LaTeX">$_{\text{4}}$</tex-math> </inline-formula> or Si<inline-formula> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula>N<inline-formula> <tex-math notation="LaTeX">$_{\text{4}}$</tex-math> </inline-formula>/ZrO<inline-formula> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> stack) under off-, semi-on, and ON-state stress have been investigated in this work. Under the OFF-state stress of 40 V, a 20% reduction in the maximum drain current has been observed in devices passivated with Si<inline-formula> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula>N<inline-formula> <tex-math notation="LaTeX">$_{\text{4}}$</tex-math> </inline-formula>, along with a degraded <inline-formula> <tex-math notation="LaTeX">$\textit{R}_{\biosc{on}}$</tex-math> </inline-formula> that is 1.42 times higher than the initial <inline-formula> <tex-math notation="LaTeX">$\textit{R}_{\biosc{on}}$</tex-math> </inline-formula>. In contrast, devices passivated with Si<inline-formula> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula>N<inline-formula> <tex-math notation="LaTeX">$_{\text{4}}$</tex-math> </inline-formula>/ZrO<inline-formula> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> stack have only shown a 2% reduction, and the <inline-formula> <tex-math notation="LaTeX">$\textit{R}_{\biosc{on}}$</tex-math> </inline-formula> degradation is only 1.03 times higher than the initial <inline-formula> <tex-math notation="LaTeX">$\textit{R}_{\biosc{on}}$</tex-math> </inline-formula>. This can be attributed to the different interface states present in the two devices. According to the multifrequency<inline-formula> <tex-math notation="LaTeX">$\vphantom{_{\int_{\text{a}}}}$</tex-math> </inline-formula> <italic>C</italic>–<italic>V</italic> curves, the Si<inline-formula> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula>N<inline-formula> <tex-math notation="LaTeX">$_{\text{4}}$</tex-math> </inline-formula>/GaN-cap interface trap density is in the range of 2<inline-formula> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 10<inline-formula> <tex-math notation="LaTeX">$^{\text{13}}$</tex-math> </inline-formula>–5.5 <inline-formula> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 10<inline-formula> <tex-math notation="LaTeX">$^{\text{13}}$</tex-math> </inline-formula> from <inline-formula> <tex-math notation="LaTeX">$\textit{E}_\textit{C}-\text{0.47}$</tex-math> </inline-formula> to <inline-formula> <tex-math notation="LaTeX">$\textit{E}_\textit{C}-\text{0.37}$</tex-math> </inline-formula> eV, and ZrO<inline-formula> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula>/GaN-cap interface trap density is in the range of 2.7 <inline-formula> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 10<inline-formula> <tex-math notation="LaTeX">$^{\text{12}}$</tex-math> </inline-formula>–1.2 <inline-formula> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 10<inline-formula> <tex-math notation="LaTeX">$^{\text{13}}$</tex-math> </inline-formula> from <inline-formula> <tex-math notation="LaTeX">$\textit{E}_\textit{C}-\text{0.47}$</tex-math> </inline-formula> to <inline-formula> <tex-math notation="LaTeX">$\textit{E}_\textit{C}-\text{0.31}$</tex-math> </inline-formula> eV. Under the semi-on state stress, the dynamic <inline-formula> <tex-math notation="LaTeX">$\textit{R}_{\biosc{on}}$</tex-math> </inline-formula> degradation exhibits a “bell-shaped” behavior in the Si<inline-formula> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula>N<inline-formula> <tex-math notation="LaTeX">$_{\text{4}}$</tex-math> </inline-formula>/ZrO<inline-formula> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> stack passivated sample. Arrenhius plots indicate that the sample passivated by Si<inline-formula> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula>N<inline-formula> <tex-math notation="LaTeX">$_{\text{4}}$</tex-math> </inline-formula> has an activation energy of 0.06 eV, while the sample passivated by Si<inline-formula> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula>N<inline-formula> <tex-math notation="LaTeX">$_{\text{4}}$</tex-math> </inline-formula>/ZrO<inline-formula> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> stack has an activation energy of 0.16 eV, which means a deeper trap distribution. The <inline-formula> <tex-math notation="LaTeX">$\textit{R}_{\biosc{on}}$</tex-math> </inline-formula> degradation under semi-on/ON-state stress in Si<inline-formula> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula>N<inline-formula> <tex-math notation="LaTeX">$_{\text{4}}$</tex-math> </inline-formula>/ZrO<inline-formula> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> passivated devices can be attributed to the hot-electron-related injection mechanism. Device designers must consider the trade-off between the high breakdown voltage (BV) and the <inline-formula> <tex-math notation="LaTeX">$\textit{R}_{\biosc{on}}$</tex-math> </inline-formula> degradation in Si<inline-formula> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula>N<inline-formula> <tex-math notation="LaTeX">$_{\text{4}}$</tex-math> </inline-formula>/ZrO<inline-formula> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> passivated devices.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2024.3372933
Publication status	Accepted/In press - 2024

Keywords

AlGaN/GaN
dynamic ON-resistance
high-<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$\kappa$</tex-math> </inline-formula> dielectric
metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs)

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10.1109/TED.2024.3372933

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@article{db75336c669c48a3a1107cb0a1e30009,

title = "Dynamic RON Degradation in AlGaN/GaN MIS-HEMTs With Si3N4 or Si3N4/ZrO2Passivation Layer",

abstract = "The dynamic $\textit{R}_{\biosc{on}}$ degradation in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different passivation layers (Si $_{\text{3}}$ N $_{\text{4}}$ or Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ stack) under off-, semi-on, and ON-state stress have been investigated in this work. Under the OFF-state stress of 40 V, a 20% reduction in the maximum drain current has been observed in devices passivated with Si $_{\text{3}}$ N $_{\text{4}}$ , along with a degraded $\textit{R}_{\biosc{on}}$ that is 1.42 times higher than the initial $\textit{R}_{\biosc{on}}$ . In contrast, devices passivated with Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ stack have only shown a 2% reduction, and the $\textit{R}_{\biosc{on}}$ degradation is only 1.03 times higher than the initial $\textit{R}_{\biosc{on}}$ . This can be attributed to the different interface states present in the two devices. According to the multifrequency $\vphantom{_{\int_{\text{a}}}}$ C–V curves, the Si $_{\text{3}}$ N $_{\text{4}}$ /GaN-cap interface trap density is in the range of 2 $\times$ 10 $^{\text{13}}$ –5.5 $\times$ 10 $^{\text{13}}$ from $\textit{E}_\textit{C}-\text{0.47}$ to $\textit{E}_\textit{C}-\text{0.37}$ eV, and ZrO $_{\text{2}}$ /GaN-cap interface trap density is in the range of 2.7 $\times$ 10 $^{\text{12}}$ –1.2 $\times$ 10 $^{\text{13}}$ from $\textit{E}_\textit{C}-\text{0.47}$ to $\textit{E}_\textit{C}-\text{0.31}$ eV. Under the semi-on state stress, the dynamic $\textit{R}_{\biosc{on}}$ degradation exhibits a “bell-shaped” behavior in the Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ stack passivated sample. Arrenhius plots indicate that the sample passivated by Si $_{\text{3}}$ N $_{\text{4}}$ has an activation energy of 0.06 eV, while the sample passivated by Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ stack has an activation energy of 0.16 eV, which means a deeper trap distribution. The $\textit{R}_{\biosc{on}}$ degradation under semi-on/ON-state stress in Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ passivated devices can be attributed to the hot-electron-related injection mechanism. Device designers must consider the trade-off between the high breakdown voltage (BV) and the $\textit{R}_{\biosc{on}}$ degradation in Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ passivated devices.",

keywords = "AlGaN/GaN, dynamic ON-resistance, high-<inline-formula xmlns:ali={"}http://www.niso.org/schemas/ali/1.0/{"} xmlns:mml={"}http://www.w3.org/1998/Math/MathML{"} xmlns:xlink={"}http://www.w3.org/1999/xlink{"} xmlns:xsi={"}http://www.w3.org/2001/XMLSchema-instance{"}> <tex-math notation={"}LaTeX{"}>$\kappa$</tex-math> </inline-formula> dielectric, metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs)",

author = "Ye Liang and Yuanlei Zhang and Xiuyuan He and Yinchao Zhao and Jiudun Yan and Mingxiang Wang and Wen Liu",

note = "Publisher Copyright: IEEE",

year = "2024",

doi = "10.1109/TED.2024.3372933",

language = "English",

pages = "1--6",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

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TY - JOUR

T1 - Dynamic RON Degradation in AlGaN/GaN MIS-HEMTs With Si3N4 or Si3N4/ZrO2Passivation Layer

AU - Liang, Ye

AU - Zhang, Yuanlei

AU - He, Xiuyuan

AU - Zhao, Yinchao

AU - Yan, Jiudun

AU - Wang, Mingxiang

AU - Liu, Wen

N1 - Publisher Copyright: IEEE

PY - 2024

Y1 - 2024

N2 - The dynamic $\textit{R}_{\biosc{on}}$ degradation in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different passivation layers (Si $_{\text{3}}$ N $_{\text{4}}$ or Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ stack) under off-, semi-on, and ON-state stress have been investigated in this work. Under the OFF-state stress of 40 V, a 20% reduction in the maximum drain current has been observed in devices passivated with Si $_{\text{3}}$ N $_{\text{4}}$ , along with a degraded $\textit{R}_{\biosc{on}}$ that is 1.42 times higher than the initial $\textit{R}_{\biosc{on}}$ . In contrast, devices passivated with Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ stack have only shown a 2% reduction, and the $\textit{R}_{\biosc{on}}$ degradation is only 1.03 times higher than the initial $\textit{R}_{\biosc{on}}$ . This can be attributed to the different interface states present in the two devices. According to the multifrequency $\vphantom{_{\int_{\text{a}}}}$ C–V curves, the Si $_{\text{3}}$ N $_{\text{4}}$ /GaN-cap interface trap density is in the range of 2 $\times$ 10 $^{\text{13}}$ –5.5 $\times$ 10 $^{\text{13}}$ from $\textit{E}_\textit{C}-\text{0.47}$ to $\textit{E}_\textit{C}-\text{0.37}$ eV, and ZrO $_{\text{2}}$ /GaN-cap interface trap density is in the range of 2.7 $\times$ 10 $^{\text{12}}$ –1.2 $\times$ 10 $^{\text{13}}$ from $\textit{E}_\textit{C}-\text{0.47}$ to $\textit{E}_\textit{C}-\text{0.31}$ eV. Under the semi-on state stress, the dynamic $\textit{R}_{\biosc{on}}$ degradation exhibits a “bell-shaped” behavior in the Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ stack passivated sample. Arrenhius plots indicate that the sample passivated by Si $_{\text{3}}$ N $_{\text{4}}$ has an activation energy of 0.06 eV, while the sample passivated by Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ stack has an activation energy of 0.16 eV, which means a deeper trap distribution. The $\textit{R}_{\biosc{on}}$ degradation under semi-on/ON-state stress in Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ passivated devices can be attributed to the hot-electron-related injection mechanism. Device designers must consider the trade-off between the high breakdown voltage (BV) and the $\textit{R}_{\biosc{on}}$ degradation in Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ passivated devices.

AB - The dynamic $\textit{R}_{\biosc{on}}$ degradation in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different passivation layers (Si $_{\text{3}}$ N $_{\text{4}}$ or Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ stack) under off-, semi-on, and ON-state stress have been investigated in this work. Under the OFF-state stress of 40 V, a 20% reduction in the maximum drain current has been observed in devices passivated with Si $_{\text{3}}$ N $_{\text{4}}$ , along with a degraded $\textit{R}_{\biosc{on}}$ that is 1.42 times higher than the initial $\textit{R}_{\biosc{on}}$ . In contrast, devices passivated with Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ stack have only shown a 2% reduction, and the $\textit{R}_{\biosc{on}}$ degradation is only 1.03 times higher than the initial $\textit{R}_{\biosc{on}}$ . This can be attributed to the different interface states present in the two devices. According to the multifrequency $\vphantom{_{\int_{\text{a}}}}$ C–V curves, the Si $_{\text{3}}$ N $_{\text{4}}$ /GaN-cap interface trap density is in the range of 2 $\times$ 10 $^{\text{13}}$ –5.5 $\times$ 10 $^{\text{13}}$ from $\textit{E}_\textit{C}-\text{0.47}$ to $\textit{E}_\textit{C}-\text{0.37}$ eV, and ZrO $_{\text{2}}$ /GaN-cap interface trap density is in the range of 2.7 $\times$ 10 $^{\text{12}}$ –1.2 $\times$ 10 $^{\text{13}}$ from $\textit{E}_\textit{C}-\text{0.47}$ to $\textit{E}_\textit{C}-\text{0.31}$ eV. Under the semi-on state stress, the dynamic $\textit{R}_{\biosc{on}}$ degradation exhibits a “bell-shaped” behavior in the Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ stack passivated sample. Arrenhius plots indicate that the sample passivated by Si $_{\text{3}}$ N $_{\text{4}}$ has an activation energy of 0.06 eV, while the sample passivated by Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ stack has an activation energy of 0.16 eV, which means a deeper trap distribution. The $\textit{R}_{\biosc{on}}$ degradation under semi-on/ON-state stress in Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ passivated devices can be attributed to the hot-electron-related injection mechanism. Device designers must consider the trade-off between the high breakdown voltage (BV) and the $\textit{R}_{\biosc{on}}$ degradation in Si $_{\text{3}}$ N $_{\text{4}}$ /ZrO $_{\text{2}}$ passivated devices.

KW - AlGaN/GaN

KW - dynamic ON-resistance

KW - high-<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$\kappa$</tex

KW - metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs)

UR - http://www.scopus.com/inward/record.url?scp=85188019877&partnerID=8YFLogxK

U2 - 10.1109/TED.2024.3372933

DO - 10.1109/TED.2024.3372933

M3 - Article

AN - SCOPUS:85188019877

SN - 0018-9383

SP - 1

EP - 6

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -

Dynamic RON Degradation in AlGaN/GaN MIS-HEMTs With Si3N4 or Si3N4/ZrO2Passivation Layer

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