Dielectric behaviors of ZnFe2O4, - SiO2 composite thin films prepared by sol-gel method

H. Jiang, H. W. Liu, H. Yu, F. Gao, J. M. Liu*, C. W. Nan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The dielectric property of ZnFe2O4 - SiO2 composite thin films deposited on Pt-Ti-SiO2-Si substrates, prepared by sol-gel method, are investigated. It is observed that the thin films consist of ZnFe2O4 nanoparticles embedded in the matrix of SiO2. Such a composite structure exhibits a significantly enhanced dielectric constant with respect to SiO2 thin films without too large dielectric loss enhancement.

Original languageEnglish
Pages (from-to)2682-2686
Number of pages5
JournalInternational Journal of Modern Physics B
Volume19
Issue number15-17
DOIs
Publication statusPublished - 10 Jul 2005
Externally publishedYes

Keywords

  • Dielectric capacitance
  • Magnetism
  • Nanoparticle

Fingerprint

Dive into the research topics of 'Dielectric behaviors of ZnFe2O4, - SiO2 composite thin films prepared by sol-gel method'. Together they form a unique fingerprint.

Cite this