TY - JOUR
T1 - Descriptor: MOSFET Electrical Simulation Dataset (MESD)
AU - Low, Kain Lu
AU - Zhang, Yuhang
AU - Li, Longfan
AU - Shao, Leilai
AU - Sun, Yanan
AU - Zhao, Jian
AU - Sun, Yabin
AU - Shi, Yanling
AU - Li, Yongfu
PY - 2024/10
Y1 - 2024/10
N2 - This article introduces the metal–oxide–semiconductor field effect transistor (MOSFET) electrical simulation dataset, MESD, an extensive collection of I - V and C - V characteristics data simulated across different foundries’ Berkeley short-channel IGFET models (BSIMs). The MESD dataset covers a range of bias voltages, temperatures, and MOSFET physical dimensions across several process technologies from 3 to 350 nm. We have detailed the design methodology used in the generation of the dataset and have outlined the structure and accessibility of the data. MESD is designed to serve as a standardized benchmark for evaluating and comparing MOSFET models, aiding semiconductor researchers and model developers in assessing the accuracy of their simulations against a robust set of controlled data.
AB - This article introduces the metal–oxide–semiconductor field effect transistor (MOSFET) electrical simulation dataset, MESD, an extensive collection of I - V and C - V characteristics data simulated across different foundries’ Berkeley short-channel IGFET models (BSIMs). The MESD dataset covers a range of bias voltages, temperatures, and MOSFET physical dimensions across several process technologies from 3 to 350 nm. We have detailed the design methodology used in the generation of the dataset and have outlined the structure and accessibility of the data. MESD is designed to serve as a standardized benchmark for evaluating and comparing MOSFET models, aiding semiconductor researchers and model developers in assessing the accuracy of their simulations against a robust set of controlled data.
U2 - 10.1109/IEEEDATA.2024.3481356
DO - 10.1109/IEEEDATA.2024.3481356
M3 - Article
SN - 2995-4274
VL - 1
SP - 27
EP - 32
JO - IEEE Data Descriptions
JF - IEEE Data Descriptions
ER -