Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents

Yanfei Qi; Ce Zhou Zhao; Chenguang Liu; Yuxiao Fang; Jiahuan He; Tian Luo; Li Yang; Chun Zhao

doi:10.1088/1361-6641/aaaf41

Comparisons of switching characteristics between Ti/Al₂O₃/Pt and TiN/Al₂O₃/Pt RRAM devices with various compliance currents

Yanfei Qi, Ce Zhou Zhao, Chenguang Liu, Yuxiao Fang, Jiahuan He, Tian Luo, Li Yang, Chun Zhao

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

In this study, the influence of the Ti and TiN top electrodes on the switching behaviors of the Al₂O₃/Pt resistive random access memory devices with various compliance currents (CCs, 1-15 mA) has been compared. Based on the similar statistical results of the resistive switching (RS) parameters such as V _set/V _reset, R _HRS/R _LRS (measured at 0.10 V) and resistance ratio with various CCs for both devices, the Ti/Al₂O₃/Pt device differs from the TiN/Al₂O₃/Pt device mainly in the forming process rather than in the following switching cycles. Apart from the initial isolated state, the Ti/Al₂O₃/Pt device has the initial intermediate state as well. In addition, its forming voltage is relatively lower. The conduction mechanisms of the ON and OFF state for both devices are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Therefore, with the combined modulations of the CCs and the stop voltages, the TiN/Al₂O₃/Pt device is more stable for nonvolatile memory applications to further improve the RS performance.

Original language	English
Article number	045003
Journal	Semiconductor Science and Technology
Volume	33
Issue number	4
DOIs	https://doi.org/10.1088/1361-6641/aaaf41
Publication status	Published - 6 Mar 2018

Keywords

RRAM
compliance current
forming
statistics
top electrode

Access to Document

10.1088/1361-6641/aaaf41

Cite this

@article{97c1dffd08f74edfbd0dbec4ecfff0a4,

title = "Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents",

abstract = "In this study, the influence of the Ti and TiN top electrodes on the switching behaviors of the Al2O3/Pt resistive random access memory devices with various compliance currents (CCs, 1-15 mA) has been compared. Based on the similar statistical results of the resistive switching (RS) parameters such as V set/V reset, R HRS/R LRS (measured at 0.10 V) and resistance ratio with various CCs for both devices, the Ti/Al2O3/Pt device differs from the TiN/Al2O3/Pt device mainly in the forming process rather than in the following switching cycles. Apart from the initial isolated state, the Ti/Al2O3/Pt device has the initial intermediate state as well. In addition, its forming voltage is relatively lower. The conduction mechanisms of the ON and OFF state for both devices are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Therefore, with the combined modulations of the CCs and the stop voltages, the TiN/Al2O3/Pt device is more stable for nonvolatile memory applications to further improve the RS performance.",

keywords = "RRAM, compliance current, forming, statistics, top electrode",

author = "Yanfei Qi and Zhao, {Ce Zhou} and Chenguang Liu and Yuxiao Fang and Jiahuan He and Tian Luo and Li Yang and Chun Zhao",

note = "Funding Information: This research was funded in part by the National Natural Science Foundation of China under the grant no. 11375146, 21503169 and 2175011441, Guangdong Research Center for Interfacial Engineering of Functional Materials under grant no. 201701 and Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Lab for New Energy Techniques under grant no. RR0140. Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

year = "2018",

month = mar,

day = "6",

doi = "10.1088/1361-6641/aaaf41",

language = "English",

volume = "33",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

number = "4",

}

TY - JOUR

T1 - Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents

AU - Qi, Yanfei

AU - Zhao, Ce Zhou

AU - Liu, Chenguang

AU - Fang, Yuxiao

AU - He, Jiahuan

AU - Luo, Tian

AU - Yang, Li

AU - Zhao, Chun

N1 - Funding Information: This research was funded in part by the National Natural Science Foundation of China under the grant no. 11375146, 21503169 and 2175011441, Guangdong Research Center for Interfacial Engineering of Functional Materials under grant no. 201701 and Suzhou Industrial Park Initiative Platform Development for Suzhou Municipal Key Lab for New Energy Techniques under grant no. RR0140. Publisher Copyright: © 2018 IOP Publishing Ltd.

PY - 2018/3/6

Y1 - 2018/3/6

N2 - In this study, the influence of the Ti and TiN top electrodes on the switching behaviors of the Al2O3/Pt resistive random access memory devices with various compliance currents (CCs, 1-15 mA) has been compared. Based on the similar statistical results of the resistive switching (RS) parameters such as V set/V reset, R HRS/R LRS (measured at 0.10 V) and resistance ratio with various CCs for both devices, the Ti/Al2O3/Pt device differs from the TiN/Al2O3/Pt device mainly in the forming process rather than in the following switching cycles. Apart from the initial isolated state, the Ti/Al2O3/Pt device has the initial intermediate state as well. In addition, its forming voltage is relatively lower. The conduction mechanisms of the ON and OFF state for both devices are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Therefore, with the combined modulations of the CCs and the stop voltages, the TiN/Al2O3/Pt device is more stable for nonvolatile memory applications to further improve the RS performance.

AB - In this study, the influence of the Ti and TiN top electrodes on the switching behaviors of the Al2O3/Pt resistive random access memory devices with various compliance currents (CCs, 1-15 mA) has been compared. Based on the similar statistical results of the resistive switching (RS) parameters such as V set/V reset, R HRS/R LRS (measured at 0.10 V) and resistance ratio with various CCs for both devices, the Ti/Al2O3/Pt device differs from the TiN/Al2O3/Pt device mainly in the forming process rather than in the following switching cycles. Apart from the initial isolated state, the Ti/Al2O3/Pt device has the initial intermediate state as well. In addition, its forming voltage is relatively lower. The conduction mechanisms of the ON and OFF state for both devices are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Therefore, with the combined modulations of the CCs and the stop voltages, the TiN/Al2O3/Pt device is more stable for nonvolatile memory applications to further improve the RS performance.

KW - RRAM

KW - compliance current

KW - forming

KW - statistics

KW - top electrode

UR - http://www.scopus.com/inward/record.url?scp=85044943655&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aaaf41

DO - 10.1088/1361-6641/aaaf41

M3 - Article

AN - SCOPUS:85044943655

SN - 0268-1242

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

M1 - 045003

ER -