Cold silicon preamorphization implant and presilicide sulfur implant for advanced nickel silicide contacts

Yi Tong; Qian Zhou; Kain Lu Low; Lan Xiang Wang; Lye Hing Chua; Thirumal Thanigaivelan; Todd Henry; Yee Chia Yeo

doi:10.1109/TED.2014.2347705

Cold silicon preamorphization implant and presilicide sulfur implant for advanced nickel silicide contacts

Yi Tong^*, Qian Zhou, Kain Lu Low, Lan Xiang Wang, Lye Hing Chua, Thirumal Thanigaivelan, Todd Henry, Yee Chia Yeo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We report the first demonstration of a nickel silicide (NiSi) contact formation technique using cold silicon (Si) preamorphization implant (PAI) combined with presilicide sulfur (S) implant. The cold Si PAI suppresses the agglomeration of NiSi film at elevated temperatures. Presilicide S implant and its segregation at the interface of NiSi and n-type Si (n-Si) after silicidation significantly lowers the effective Schottky barrier height (Φ_Bⁿ) for electrons at the NiSi/n-Si contact. The S atoms in Si could be modeled as donor-like traps near the NiSi/n-Si interface, and a simulation study was performed to explain the reduction of (Φ_Bⁿ) caused by S.

Original language	English
Article number	6888469
Pages (from-to)	3499-3506
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	10
DOIs	https://doi.org/10.1109/TED.2014.2347705
Publication status	Published - 1 Oct 2014
Externally published	Yes

Keywords

Cold silicon implant
nickel silicide (NiSi)
Schottky barrier height (SBH)
sulfur (S) segregation

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10.1109/TED.2014.2347705

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title = "Cold silicon preamorphization implant and presilicide sulfur implant for advanced nickel silicide contacts",

abstract = "We report the first demonstration of a nickel silicide (NiSi) contact formation technique using cold silicon (Si) preamorphization implant (PAI) combined with presilicide sulfur (S) implant. The cold Si PAI suppresses the agglomeration of NiSi film at elevated temperatures. Presilicide S implant and its segregation at the interface of NiSi and n-type Si (n-Si) after silicidation significantly lowers the effective Schottky barrier height (ΦBn) for electrons at the NiSi/n-Si contact. The S atoms in Si could be modeled as donor-like traps near the NiSi/n-Si interface, and a simulation study was performed to explain the reduction of (ΦBn) caused by S.",

keywords = "Cold silicon implant, nickel silicide (NiSi), Schottky barrier height (SBH), sulfur (S) segregation",

author = "Yi Tong and Qian Zhou and Low, {Kain Lu} and Wang, {Lan Xiang} and Chua, {Lye Hing} and Thirumal Thanigaivelan and Todd Henry and Yeo, {Yee Chia}",

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doi = "10.1109/TED.2014.2347705",

language = "English",

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T1 - Cold silicon preamorphization implant and presilicide sulfur implant for advanced nickel silicide contacts

AU - Tong, Yi

AU - Zhou, Qian

AU - Low, Kain Lu

AU - Wang, Lan Xiang

AU - Chua, Lye Hing

AU - Thanigaivelan, Thirumal

AU - Henry, Todd

AU - Yeo, Yee Chia

PY - 2014/10/1

Y1 - 2014/10/1

N2 - We report the first demonstration of a nickel silicide (NiSi) contact formation technique using cold silicon (Si) preamorphization implant (PAI) combined with presilicide sulfur (S) implant. The cold Si PAI suppresses the agglomeration of NiSi film at elevated temperatures. Presilicide S implant and its segregation at the interface of NiSi and n-type Si (n-Si) after silicidation significantly lowers the effective Schottky barrier height (ΦBn) for electrons at the NiSi/n-Si contact. The S atoms in Si could be modeled as donor-like traps near the NiSi/n-Si interface, and a simulation study was performed to explain the reduction of (ΦBn) caused by S.

AB - We report the first demonstration of a nickel silicide (NiSi) contact formation technique using cold silicon (Si) preamorphization implant (PAI) combined with presilicide sulfur (S) implant. The cold Si PAI suppresses the agglomeration of NiSi film at elevated temperatures. Presilicide S implant and its segregation at the interface of NiSi and n-type Si (n-Si) after silicidation significantly lowers the effective Schottky barrier height (ΦBn) for electrons at the NiSi/n-Si contact. The S atoms in Si could be modeled as donor-like traps near the NiSi/n-Si interface, and a simulation study was performed to explain the reduction of (ΦBn) caused by S.

KW - Cold silicon implant

KW - nickel silicide (NiSi)

KW - Schottky barrier height (SBH)

KW - sulfur (S) segregation

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DO - 10.1109/TED.2014.2347705

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

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ER -

Cold silicon preamorphization implant and presilicide sulfur implant for advanced nickel silicide contacts

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Keywords

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