Bound exciton and free exciton states in GaSe thin slab

Chengrong Wei; Xi Chen; Dian Li; Huimin Su; Hongtao He; Jun Feng Dai

doi:10.1038/srep33890

Bound exciton and free exciton states in GaSe thin slab

Chengrong Wei, Xi Chen, Dian Li, Huimin Su, Hongtao He, Jun Feng Dai^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

The photoluminescence (PL) and absorption experiments have been performed in GaSe slab with incident light polarized perpendicular to c-axis of sample at 10 K. An obvious energy difference of about 34 meV between exciton absorption peak and PL peak (the highest energy peak) is observed. By studying the temperature dependence of PL and absorption spectra, we attribute it to energy difference between free exciton and bound exciton states, where main exciton absorption peak comes from free exciton absorption, and PL peak is attributed to recombination of bound exciton at 10 K. This strong bound exciton effect is stable up to 50 K. Moreover, the temperature dependence of integrated PL intensity and PL lifetime reveals that a non-radiative process, with activation energy extracted as 0.5 meV, dominates PL emission.

Original language	English
Article number	33890
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep33890
Publication status	Published - 22 Sept 2016
Externally published	Yes

Access to Document

10.1038/srep33890

Cite this

@article{c40ec413a47640d0ae5246a4af8e4d89,

title = "Bound exciton and free exciton states in GaSe thin slab",

abstract = "The photoluminescence (PL) and absorption experiments have been performed in GaSe slab with incident light polarized perpendicular to c-axis of sample at 10 K. An obvious energy difference of about 34 meV between exciton absorption peak and PL peak (the highest energy peak) is observed. By studying the temperature dependence of PL and absorption spectra, we attribute it to energy difference between free exciton and bound exciton states, where main exciton absorption peak comes from free exciton absorption, and PL peak is attributed to recombination of bound exciton at 10 K. This strong bound exciton effect is stable up to 50 K. Moreover, the temperature dependence of integrated PL intensity and PL lifetime reveals that a non-radiative process, with activation energy extracted as 0.5 meV, dominates PL emission.",

author = "Chengrong Wei and Xi Chen and Dian Li and Huimin Su and Hongtao He and Dai, {Jun Feng}",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2016.",

year = "2016",

month = sep,

day = "22",

doi = "10.1038/srep33890",

language = "English",

volume = "6",

journal = "Scientific Reports",

issn = "2045-2322",

}

TY - JOUR

T1 - Bound exciton and free exciton states in GaSe thin slab

AU - Wei, Chengrong

AU - Chen, Xi

AU - Li, Dian

AU - Su, Huimin

AU - He, Hongtao

AU - Dai, Jun Feng

PY - 2016/9/22

Y1 - 2016/9/22

N2 - The photoluminescence (PL) and absorption experiments have been performed in GaSe slab with incident light polarized perpendicular to c-axis of sample at 10 K. An obvious energy difference of about 34 meV between exciton absorption peak and PL peak (the highest energy peak) is observed. By studying the temperature dependence of PL and absorption spectra, we attribute it to energy difference between free exciton and bound exciton states, where main exciton absorption peak comes from free exciton absorption, and PL peak is attributed to recombination of bound exciton at 10 K. This strong bound exciton effect is stable up to 50 K. Moreover, the temperature dependence of integrated PL intensity and PL lifetime reveals that a non-radiative process, with activation energy extracted as 0.5 meV, dominates PL emission.

AB - The photoluminescence (PL) and absorption experiments have been performed in GaSe slab with incident light polarized perpendicular to c-axis of sample at 10 K. An obvious energy difference of about 34 meV between exciton absorption peak and PL peak (the highest energy peak) is observed. By studying the temperature dependence of PL and absorption spectra, we attribute it to energy difference between free exciton and bound exciton states, where main exciton absorption peak comes from free exciton absorption, and PL peak is attributed to recombination of bound exciton at 10 K. This strong bound exciton effect is stable up to 50 K. Moreover, the temperature dependence of integrated PL intensity and PL lifetime reveals that a non-radiative process, with activation energy extracted as 0.5 meV, dominates PL emission.

UR - http://www.scopus.com/inward/record.url?scp=84988650907&partnerID=8YFLogxK

U2 - 10.1038/srep33890

DO - 10.1038/srep33890

M3 - Article

AN - SCOPUS:84988650907

SN - 2045-2322

VL - 6

JO - Scientific Reports

JF - Scientific Reports

M1 - 33890

ER -

Bound exciton and free exciton states in GaSe thin slab

Abstract

Access to Document

Other files and links

Cite this