Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates

Yuxia Feng; Xuelin Yang; Jianpeng Cheng; Jie Zhang; Panfeng Ji; Jianfei Shen; Anqi Hu; Fujun Xu; Tongjun Yu; Xinqiang Wang; Bo Shen

doi:10.1063/1.4983386

Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates

Yuxia Feng, Xuelin Yang, Jianpeng Cheng, Jie Zhang, Panfeng Ji, Jianfei Shen, Anqi Hu, Fujun Xu, Tongjun Yu, Xinqiang Wang, Bo Shen

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have investigated the growth and relaxation mechanisms of anisotropic lattice misfit strain in AlN and GaN layers on Si (110) substrates. A qualitative model is proposed to explain the relaxation process. It is revealed that the anisotropic misfit strain is quickly relaxed in the low temperature AlN layer by the formation of interface misfit dislocations, small misoriented grains, and lattice distortion. As a result, isotropic properties and atomically smooth surface are observed in the high temperature AlN layer. Based on this isotropic AlN layer, a high quality GaN layer and AlGaN/GaN heterostructures with a high electron mobility of 2160 cm²/(V · s) have been obtained. This work will have important impacts on the understanding of the epitaxy of isotropic semiconductor films on anisotropic substrates.

Original language	English
Article number	192104
Journal	Applied Physics Letters
Volume	110
Issue number	19
DOIs	https://doi.org/10.1063/1.4983386
Publication status	Published - 8 May 2017
Externally published	Yes

Access to Document

10.1063/1.4983386

Cite this

@article{f1ce0d6441e143a881320ee6c5e8343b,

title = "Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates",

abstract = "We have investigated the growth and relaxation mechanisms of anisotropic lattice misfit strain in AlN and GaN layers on Si (110) substrates. A qualitative model is proposed to explain the relaxation process. It is revealed that the anisotropic misfit strain is quickly relaxed in the low temperature AlN layer by the formation of interface misfit dislocations, small misoriented grains, and lattice distortion. As a result, isotropic properties and atomically smooth surface are observed in the high temperature AlN layer. Based on this isotropic AlN layer, a high quality GaN layer and AlGaN/GaN heterostructures with a high electron mobility of 2160 cm2/(V · s) have been obtained. This work will have important impacts on the understanding of the epitaxy of isotropic semiconductor films on anisotropic substrates.",

author = "Yuxia Feng and Xuelin Yang and Jianpeng Cheng and Jie Zhang and Panfeng Ji and Jianfei Shen and Anqi Hu and Fujun Xu and Tongjun Yu and Xinqiang Wang and Bo Shen",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = may,

day = "8",

doi = "10.1063/1.4983386",

language = "English",

volume = "110",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "19",

}

TY - JOUR

T1 - Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates

AU - Feng, Yuxia

AU - Yang, Xuelin

AU - Cheng, Jianpeng

AU - Zhang, Jie

AU - Ji, Panfeng

AU - Shen, Jianfei

AU - Hu, Anqi

AU - Xu, Fujun

AU - Yu, Tongjun

AU - Wang, Xinqiang

AU - Shen, Bo

PY - 2017/5/8

Y1 - 2017/5/8

N2 - We have investigated the growth and relaxation mechanisms of anisotropic lattice misfit strain in AlN and GaN layers on Si (110) substrates. A qualitative model is proposed to explain the relaxation process. It is revealed that the anisotropic misfit strain is quickly relaxed in the low temperature AlN layer by the formation of interface misfit dislocations, small misoriented grains, and lattice distortion. As a result, isotropic properties and atomically smooth surface are observed in the high temperature AlN layer. Based on this isotropic AlN layer, a high quality GaN layer and AlGaN/GaN heterostructures with a high electron mobility of 2160 cm2/(V · s) have been obtained. This work will have important impacts on the understanding of the epitaxy of isotropic semiconductor films on anisotropic substrates.

AB - We have investigated the growth and relaxation mechanisms of anisotropic lattice misfit strain in AlN and GaN layers on Si (110) substrates. A qualitative model is proposed to explain the relaxation process. It is revealed that the anisotropic misfit strain is quickly relaxed in the low temperature AlN layer by the formation of interface misfit dislocations, small misoriented grains, and lattice distortion. As a result, isotropic properties and atomically smooth surface are observed in the high temperature AlN layer. Based on this isotropic AlN layer, a high quality GaN layer and AlGaN/GaN heterostructures with a high electron mobility of 2160 cm2/(V · s) have been obtained. This work will have important impacts on the understanding of the epitaxy of isotropic semiconductor films on anisotropic substrates.

UR - http://www.scopus.com/inward/record.url?scp=85019178240&partnerID=8YFLogxK

U2 - 10.1063/1.4983386

DO - 10.1063/1.4983386

M3 - Article

AN - SCOPUS:85019178240

SN - 0003-6951

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192104

ER -

Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates

Abstract

Access to Document

Other files and links

Fingerprint

Cite this