Analytical investigation of activation energy for Mg-doped p-AlGaN

Md Soyaeb Hasan; Ibrahim Mustafa Mehedi; S. M.Faruk Reza; Md Rejvi Kaysir; Md Rafiqul Islam

doi:10.1007/s11082-020-02462-x

Analytical investigation of activation energy for Mg-doped p-AlGaN

Md Soyaeb Hasan, Ibrahim Mustafa Mehedi^*, S. M.Faruk Reza, Md Rejvi Kaysir, Md Rafiqul Islam

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

An analytical model has been developed to investigate the activation energy profile in Mg-doped p-Al_xGa_1−xN alloy for the entire range of Al composition. For any Al content, the calculated activation energy quantitatively shows a good agreement with experimental result which has also been confirmed by both Hydrogen atom model and effective Bohr radius model. Through this empirical analysis, a breakthrough is apparent for the hole concentration and sheet resistivity with particular Al concentration. It is found that the hole concentration is < 10¹⁷ cm⁻³ while the Al content, x > 30% in p-Al_xGa_1-xN. Moreover, the sheet resistivity is found to be < 1 Ω-cm up to the Al content of 30%. Finally, the temperature-induced changing behavior of hole concentration and sheet resistivity have been explored here. These results could be a good insight for fabricating the AlGaN-based real-world devices for future optoelectronics.

Original language	English
Article number	348
Journal	Optical and Quantum Electronics
Volume	52
Issue number	7
DOIs	https://doi.org/10.1007/s11082-020-02462-x
Publication status	Published - 1 Jul 2020
Externally published	Yes

Keywords

Activation energy
Hole concentration
Mg acceptor
p-AlGaN
Sheet resistivity

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title = "Analytical investigation of activation energy for Mg-doped p-AlGaN",

abstract = "An analytical model has been developed to investigate the activation energy profile in Mg-doped p-AlxGa1−xN alloy for the entire range of Al composition. For any Al content, the calculated activation energy quantitatively shows a good agreement with experimental result which has also been confirmed by both Hydrogen atom model and effective Bohr radius model. Through this empirical analysis, a breakthrough is apparent for the hole concentration and sheet resistivity with particular Al concentration. It is found that the hole concentration is < 1017 cm−3 while the Al content, x > 30% in p-AlxGa1-xN. Moreover, the sheet resistivity is found to be < 1 Ω-cm up to the Al content of 30%. Finally, the temperature-induced changing behavior of hole concentration and sheet resistivity have been explored here. These results could be a good insight for fabricating the AlGaN-based real-world devices for future optoelectronics.",

keywords = "Activation energy, Hole concentration, Mg acceptor, p-AlGaN, Sheet resistivity",

author = "Hasan, {Md Soyaeb} and Mehedi, {Ibrahim Mustafa} and Reza, {S. M.Faruk} and Kaysir, {Md Rejvi} and Islam, {Md Rafiqul}",

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year = "2020",

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doi = "10.1007/s11082-020-02462-x",

language = "English",

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T1 - Analytical investigation of activation energy for Mg-doped p-AlGaN

AU - Hasan, Md Soyaeb

AU - Mehedi, Ibrahim Mustafa

AU - Reza, S. M.Faruk

AU - Kaysir, Md Rejvi

AU - Islam, Md Rafiqul

PY - 2020/7/1

Y1 - 2020/7/1

N2 - An analytical model has been developed to investigate the activation energy profile in Mg-doped p-AlxGa1−xN alloy for the entire range of Al composition. For any Al content, the calculated activation energy quantitatively shows a good agreement with experimental result which has also been confirmed by both Hydrogen atom model and effective Bohr radius model. Through this empirical analysis, a breakthrough is apparent for the hole concentration and sheet resistivity with particular Al concentration. It is found that the hole concentration is < 1017 cm−3 while the Al content, x > 30% in p-AlxGa1-xN. Moreover, the sheet resistivity is found to be < 1 Ω-cm up to the Al content of 30%. Finally, the temperature-induced changing behavior of hole concentration and sheet resistivity have been explored here. These results could be a good insight for fabricating the AlGaN-based real-world devices for future optoelectronics.

AB - An analytical model has been developed to investigate the activation energy profile in Mg-doped p-AlxGa1−xN alloy for the entire range of Al composition. For any Al content, the calculated activation energy quantitatively shows a good agreement with experimental result which has also been confirmed by both Hydrogen atom model and effective Bohr radius model. Through this empirical analysis, a breakthrough is apparent for the hole concentration and sheet resistivity with particular Al concentration. It is found that the hole concentration is < 1017 cm−3 while the Al content, x > 30% in p-AlxGa1-xN. Moreover, the sheet resistivity is found to be < 1 Ω-cm up to the Al content of 30%. Finally, the temperature-induced changing behavior of hole concentration and sheet resistivity have been explored here. These results could be a good insight for fabricating the AlGaN-based real-world devices for future optoelectronics.

KW - Activation energy

KW - Hole concentration

KW - Mg acceptor

KW - p-AlGaN

KW - Sheet resistivity

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DO - 10.1007/s11082-020-02462-x

M3 - Article

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SN - 0306-8919

VL - 52

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

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M1 - 348

ER -

Analytical investigation of activation energy for Mg-doped p-AlGaN

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Keywords

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