Solution processed metal oxide in emerging electronic devices

Chun Zhao, Ce Zhou Zhao*, Tian Shi Zhao

*Corresponding author for this work

Research output: Chapter in Book or Report/Conference proceedingConference Proceedingpeer-review


Recently, solution processed metal oxide (MO) attracts wide interests due to the advantages including low-cost fabrication, procedure simplicity and vacuum-free technique. Within the paper, the synthesis mechanism of metal oxide deposited through solution process is firstly briefly introduced. Then the recent advances and progress on n-type solution processed MO semiconductors as well as the solution processed MO gate dielectrics have been reviewed for thin-film transistors.

Original languageEnglish
Title of host publicationProceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019
EditorsFan Ye, Ting-Ao Tang
PublisherIEEE Computer Society
ISBN (Electronic)9781728107356
Publication statusPublished - Oct 2019
Event13th IEEE International Conference on ASIC, ASICON 2019 - Chongqing, China
Duration: 29 Oct 20191 Nov 2019

Publication series

NameProceedings of International Conference on ASIC
ISSN (Print)2162-7541
ISSN (Electronic)2162-755X


Conference13th IEEE International Conference on ASIC, ASICON 2019

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