TY - GEN
T1 - Performance Comparative Analysis of MESFET with Si, GaAs, SiC and GaN Substrate Effects
AU - Afzal, Waseem
AU - Afaq, Amir
AU - Rehman, Saif Ur
AU - Rowe, W. S.T.
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - Several attempts have been made in the last decade for the advancement of field effect transistors. In this paper, comparative analysis of small signal modeling of FET has been presented. An improved and a proficient parameter extraction strategy applied to FET for mm-wave applications, different performance parameters regarding losses and their variation with higher frequencies are presented. Measurements of the scattering parameters from frequency range of 0.1 GHz to 40 GHz at room temperature with maximum transconductance have been performed. The execution is surveyed through S-parameters estimations to assess the devices intrinsic and extrinsic parameters by utilizing de-embedding method. Experimental and simulated values are compared and found to be in excellent agreement.
AB - Several attempts have been made in the last decade for the advancement of field effect transistors. In this paper, comparative analysis of small signal modeling of FET has been presented. An improved and a proficient parameter extraction strategy applied to FET for mm-wave applications, different performance parameters regarding losses and their variation with higher frequencies are presented. Measurements of the scattering parameters from frequency range of 0.1 GHz to 40 GHz at room temperature with maximum transconductance have been performed. The execution is surveyed through S-parameters estimations to assess the devices intrinsic and extrinsic parameters by utilizing de-embedding method. Experimental and simulated values are compared and found to be in excellent agreement.
UR - http://www.scopus.com/inward/record.url?scp=85126392643&partnerID=8YFLogxK
U2 - 10.1109/PIERS53385.2021.9694726
DO - 10.1109/PIERS53385.2021.9694726
M3 - Conference Proceeding
AN - SCOPUS:85126392643
T3 - Progress in Electromagnetics Research Symposium
SP - 958
EP - 963
BT - 2021 Photonics and Electromagnetics Research Symposium, PIERS 2021 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 Photonics and Electromagnetics Research Symposium, PIERS 2021
Y2 - 21 November 2021 through 25 November 2021
ER -