TY - GEN
T1 - Monolithic Comparators using E/D-mode AlGaN/GaN MIS-HEMTs for High-temperature Applications
AU - Wang, Weisheng
AU - Li, Ang
AU - Cui, Miao
AU - Wen, Huiqing
AU - Liu, Wen
N1 - Funding Information:
This work was supported by the Suzhou Science and Technology program (SYG201923), the Key Program Special Fund in Xi an Jiaotong Liverpool University (XJTLU) (KSF-A-12 and KSF-T-07)
Funding Information:
This work was supported by the Suzhou Science and Technology program (SYG201923), the Key Program Special
Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - AlGaN/GaN metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMT) in enhancement (E-) and depletion (D-) modes are monolithically integrated on an intelligent integrated circuit (IC) platform to form the basic circuit modules-the comparators. The comparator circuit operates over different voltage ranges by varying the DIE-mode type of the differential input pair. The transfer characteristics of E/D mode MIS-HEMT comparators are shown at room temperature and high temperatures up to 200°C. The results indicate that the proposed comparators with different E/D operating modes correspond to different operating ranges, implementing logic conversion for -8 to 0 V and 0 to 5 V, respectively. The results of these comparators demonstrate the feasibility and flexibility of the structure and provide additional options for monolithic integration for the all-GaN power platform.
AB - AlGaN/GaN metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMT) in enhancement (E-) and depletion (D-) modes are monolithically integrated on an intelligent integrated circuit (IC) platform to form the basic circuit modules-the comparators. The comparator circuit operates over different voltage ranges by varying the DIE-mode type of the differential input pair. The transfer characteristics of E/D mode MIS-HEMT comparators are shown at room temperature and high temperatures up to 200°C. The results indicate that the proposed comparators with different E/D operating modes correspond to different operating ranges, implementing logic conversion for -8 to 0 V and 0 to 5 V, respectively. The results of these comparators demonstrate the feasibility and flexibility of the structure and provide additional options for monolithic integration for the all-GaN power platform.
UR - http://www.scopus.com/inward/record.url?scp=85125332683&partnerID=8YFLogxK
U2 - 10.1109/SSLChinaIFWS54608.2021.9675215
DO - 10.1109/SSLChinaIFWS54608.2021.9675215
M3 - Conference Proceeding
AN - SCOPUS:85125332683
T3 - 2021 18th China International Forum on Solid State Lighting and 2021 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021
SP - 33
EP - 35
BT - 2021 18th China International Forum on Solid State Lighting and 2021 7th International Forum on Wide Bandgap Semiconductors, SSLChina
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 18th China International Forum on Solid State Lighting and 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021
Y2 - 6 December 2021 through 8 December 2021
ER -