TY - JOUR
T1 - Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s
AU - Kotb, Amer
N1 - Publisher Copyright:
© 2015, Sociedade Brasileira de Física.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach–Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is included. The dependence of the output quality factor (Q-factor) on signals and QDs-SOAs’ parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ∼1 Tb/s.
AB - The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach–Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is included. The dependence of the output quality factor (Q-factor) on signals and QDs-SOAs’ parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ∼1 Tb/s.
KW - 1 Tb/s
KW - Amplified spontaneous emission
KW - Quantum-dot semiconductor optical amplifier
KW - XNOR gate
UR - http://www.scopus.com/inward/record.url?scp=84928816170&partnerID=8YFLogxK
U2 - 10.1007/s13538-015-0312-4
DO - 10.1007/s13538-015-0312-4
M3 - Article
AN - SCOPUS:84928816170
SN - 0103-9733
VL - 45
SP - 288
EP - 295
JO - Brazilian Journal of Physics
JF - Brazilian Journal of Physics
IS - 3
ER -