Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s

Amer Kotb*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach–Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is included. The dependence of the output quality factor (Q-factor) on signals and QDs-SOAs’ parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ∼1 Tb/s.

Original languageEnglish
Pages (from-to)288-295
Number of pages8
JournalBrazilian Journal of Physics
Volume45
Issue number3
DOIs
Publication statusPublished - 1 Jun 2015
Externally publishedYes

Keywords

  • 1 Tb/s
  • Amplified spontaneous emission
  • Quantum-dot semiconductor optical amplifier
  • XNOR gate

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